DIM100PHM33-F000 Dynex Semiconductor, DIM100PHM33-F000 Datasheet
DIM100PHM33-F000
Related parts for DIM100PHM33-F000
DIM100PHM33-F000 Summary of contents
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... The DIM100PHM33-F000 is a half bridge 3300V soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM100PHM33-F000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM100PHM33-F000 Test Conditions Min. Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor ...
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... DIM100PHM33-F000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol I Collector cut-off current CES I Gate leakage current GES V Gate threshold voltage GE(TH) V † Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM V † Diode forward voltage F Input capacitance ...
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... Test Conditions I = 100A 15V 1800V G(ON) G(OFF 33nF 100nH 100A 15V 1800V 16 33nF 100nH G(ON 100A 1800V /dt = 800A DIM100PHM33-F000 Min. Typ. Max. Units - 1950 - ns - 170 - ns - 110 - mJ - 1180 - ns - 225 - 150 - ...
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... DIM100PHM33-F000 TYPICAL CHARACTERISTICS 200 Common emitter T = 25˚C case V is measured at power ce busbars and not the auxiliary terminals 150 100 50 0 0.0 1.0 2.0 3.0 Collector-emitter voltage, V Fig. 3 Typical output characteristics 200 Conditions 125˚ 16.5 Ohms, g(on Ohms g(off 33nF 1800V, cc 150 V = ±15V ...
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... Fig. 9 Diode reverse bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3.5 4.0 4.5 5.0 Fig. 8 Reverse bias safe operating area 1000 T = 125˚C j 100 10 1 0.001 2500 3000 3500 - (V) R DIM100PHM33-F000 Transistor 0.01 0.1 1 Pulse width (s) p Fig. 10 Transient thermal impedance Diode 10 7/9 ...
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... DIM100PHM33-F000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1(E1/C2) 2(C1) 1) 5(E 1) 4(G 1) 8(C Nominal weight: 750g Module outline type code: P Fig ...
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... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...