NUS3116MT ON Semiconductor, NUS3116MT Datasheet

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NUS3116MT

Manufacturer Part Number
NUS3116MT
Description
Main Switch Power Mosfet -12 V, -6.2 A, ?cool Single P-channel With Dual Pnp Transistor Low Vce Sat Transistors, 3x3 Mm Wdfn Package
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
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Part Number:
NUS3116MTR2G
Manufacturer:
ON Semiconductor
Quantity:
1 700
Part Number:
NUS3116MTR2G
Manufacturer:
ON/安森美
Quantity:
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NUS3116MT
Main Switch Power
MOSFET and Dual Charging
BJT
-12 V, -6.2 A, mCoolE Single P-Channel
with Dual PNP low V
3x3 mm WDFN Package
two low V
optimizing charging performance in the battery-powered portable
electronics.
Features
Applications
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 0
This device integrates one high performance power MOSFET and
High Performance Power MOSFET
Dual-Low V
3.0x3.0x0.8 mm WDFN Package
Independent Pin-out Provides Circuit Flexibility
Low Profile (<0.8 mm) for Easy Fit in Thin Environments
This is a Pb-Free Device
Main Switch and Battery Charging Mux for Portable Electronics
Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
1
2
3
4
ce(sat)
ce(sat)
Figure 1. Simple Schematic
mCOOL™ 3x3 Pin Connections
transistors, greatly reducing the layout space and
Transistors as Charging Power Mux
D
(Top View)
ce(sat)
C
Transistors,
8
7
6
5
†For information on tape and reel specifications,
NUS3116MTR2G
V
V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CEO
CEO
(BR)DSS
-12 V
-30 V
-30 V
CASE 506BC
(Note: Microdot may be in either location)
Device
MAX
MAX
DFN8
1
ORDERING INFORMATION
3116
A
Y
WW
G
Low V
Low V
8
http://onsemi.com
32 mW @ -4.5 V
44 mW @ -2.5 V
ce(sat)
ce(sat)
= Device Code
= Assembly Location
= Year
= Work Week
= Pb-Free Package
R
(Pb-Free)
V
V
MOSFET
Package
WDFN8
DS(on)
EBO
EBO
-8.0 V
-8.0 V
Publication Order Number:
MAX
MAX
MARKING DIAGRAM
PNP (USB)
PNP (Wall)
TYP
1
3000/Tape & Reel
AYWW G
NUS3116MT/D
3116
Shipping
G
I
I
I
-6.2 A
-2.0 A
-2.0 A
D
C
C
MAX
MAX
MAX

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NUS3116MT Summary of contents

Page 1

... Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping WDFN8 3000/Tape & Reel (Pb-Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NUS3116MT/D MAX MAX MAX † ...

Page 2

... Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% NUS3116MT (T = 25°C unless otherwise stated) J Parameter Steady State ≤ ...

Page 3

... Thermal Resistance Dissipation Thermal Resistance (Note 6) 4. Single Pulse: Pulse Width = Surface-mounted on FR4 board using pad size (Cu area = 1.127 oz] including traces) 6. Surface-mounted on FR4 board using the minimum recommended pad size of 100 mm NUS3116MT (T = 25°C unless otherwise specified) J Symbol ...

Page 4

... Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance 7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% from WALL from USB R_sns Supply Voltage V DD NUS3116MT (T = 25°C unless otherwise stated) J Symbol Test Condition -10 mA CEO C B ...

Page 5

... DRAIN CURRENT (A) D Figure 5. On-Resistance vs. Drain Current 1 -4 1.4 1.2 1.0 0.8 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. On-Resistance Variation with Temperature NUS3116MT ≥ - 25° 0.5 -V Figure 4. Transfer Characteristics 0. 25° ...

Page 6

... R , GATE RESISTANCE (W) G Figure 11. Resistive Switching Time Variation vs. Gate Resistance 100 Single Pulse 10 1 0.1 0.01 0.1 Figure 13. Maximum Rated Forward Biased NUS3116MT 25° iss Figure 10. Gate-to-Source and Drain-to-Source Voltage vs ...

Page 7

... TYPICAL CHARACTERISTICS - MOSFET 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1E-06 1E-05 1E-04 NUS3116MT 1E-03 1E-02 1E-01 t, TIME (s) Figure 14. FET Thermal Response http://onsemi.com 7 1E+00 1E+01 1E+02 1E+03 ...

Page 8

... I , COLLECTOR CURRENT (A) C Figure 17. DC Current Gain vs. Collector Current 1 -1 0.9 -55 °C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 19. Base Emitter Turn-On Voltage vs. Collector Current NUS3116MT 0.60 0.55 IC/IB = 100 IC/IB = 100 0.50 0.45 0.40 0.35 0.30 0.25 IC/ 0.20 0.15 0.10 0. 0.001 Figure 16. Collector Emitter Saturation Voltage 1.0 IC/IB = 100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 ...

Page 9

... TYPICAL CHARACTERISTICS - BJT 300 275 250 225 200 175 150 125 100 EMITTER BASE VOLTAGE (V) EB Figure 21. Input Capacitance NUS3116MT Figure 22. Output Capacitance http://onsemi.com COLLECTOR BASE VOLTAGE (V) ...

Page 10

... PITCH Ç Ç Ç Ç 8X 1.80 0.52 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUS3116MT/D ...

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