NSS12201L ON Semiconductor, NSS12201L Datasheet

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NSS12201L

Manufacturer Part Number
NSS12201L
Description
12 V, 4.0 A, Low Vce Sat Npn Transistor Transistor Sot-23
Manufacturer
ON Semiconductor
Datasheet

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Manufacturer:
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Part Number:
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Manufacturer:
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NSS12201LT1G
12 V, 4.0 A, Low V
NPN Transistor
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ 100 mm
2. FR-4 @ 500 mm
MAXIMUM RATINGS
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 4
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Collector Current - Continuous
Collector Current - Peak
Electrostatic Discharge
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
ON Semiconductor's e
Typical applications are DC-DC converters and power management
This is a Pb-Free Device
T
Derate above 25°C
Junction-to-Ambient
T
Derate above 25°C
Junction-to-Ambient
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
Rating
Rating
2
2
, 1 oz. copper traces.
, 1 oz. copper traces.
CE(sat)
(T
(T
A
A
= 25°C)
= 25°C)
) and high current gain capability. These
2
PowerEdge family of low V
R
R
P
P
qJA
qJA
D
D
Symbol
Symbol
Symbol
T
V
V
V
(Note 1)
(Note 2)
ESD
J
I
(Note 1)
(Note 2)
CEO
CBO
EBO
, T
CM
I
C
stg
2
PowerEdge devices to be
CE(sat)
-55 to
+150
Max
HBM Class 3B
Max
Max
460
270
540
230
6.0
2.0
4.0
3.7
4.3
12
12
MM Class C
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
CE(sat)
°C
A
A
†For information on tape and reel specifications,
NSS12201LT1G
NPN LOW V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
EQUIVALENT R
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
Device
12 VOLTS, 4.0 AMPS
ORDERING INFORMATION
VF = Specific Device Code
M
G
DEVICE MARKING
http://onsemi.com
BASE
SOT-23 (TO-236)
= Date Code*
= Pb-Free Package
1
1
1
CE(sat)
(Pb-Free)
CASE 318
Package
SOT-23
STYLE 6
VF M G
COLLECTOR
2
EMITTER
Publication Order Number:
G
DS(on)
3
TRANSISTOR
2
3
3000/Tape & Reel
Shipping
NSS12201L/D
35 mW

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NSS12201L Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping NSS12201LT1G SOT-23 3000/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS12201L/D † ...

Page 2

... Storage ( 750 mA mA Fall ( 750 mA mA Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. NSS12201LT1G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO CE(sat) ...

Page 3

... Figure 3. DC Current Gain vs. Collector Current 1 2.0 V 0.9 CE -55 °C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.1 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 5. Base Emitter Turn-On Voltage vs. Collector Current NSS12201LT1G TYPICAL CHARACTERISTICS 0. 100 C B 150°C 0.2 25°C 0.15 -55 °C 0.1 -55 °C 0. 0.001 Figure 2. Collector Emitter Saturation Voltage 1 150°C (5.0 V) ...

Page 4

... V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1 0.1 Single Pulse Test at T 0.01 0.01 NSS12201LT1G TYPICAL CHARACTERISTICS 90 C ibo(pF 100 Thermal Limit = 25°C amb 0.1 ...

Page 5

... L1 0.35 0.54 0.69 0.014 0.021 H 2.10 2.40 2.64 0.083 0.094 E STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2.0 0.079 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS12201L/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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