UNR9118 Panasonic Corporation of North America, UNR9118 Datasheet

no-image

UNR9118

Manufacturer Part Number
UNR9118
Description
Silicon Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/911AJ/911BJ/911CJ
(UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/911D/911E/
911F/911H/911L/911AJ/911BJ/911CJ)
Silicon PNP epitaxial planer transistor
For digital circuits
I
I
I
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Resistance by Part Number
UNR9111
UNR9112
UNR9113
UNR9114
UNR9115
UNR9116
UNR9117
UNR9118
UNR9119
UNR9110
UNR911D
UNR911E
UNR911F
UNR911H
UNR911L
UNR911AJ
UNR911BJ
UNR911CJ
Absolute Maximum Ratings
Parameter
Marking Symbol
6A
6B
6C
6D
6E
6F
6H
6I
6K
6L
6M
6N
6O
6P
6Q
6X
6Y
6Z
Symbol
V
V
T
P
T
CBO
I
CEO
stg
C
T
j
0.51kΩ
100kΩ
100kΩ
4.7kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
47kΩ
10kΩ
10kΩ
10kΩ
22kΩ
47kΩ
47kΩ
47kΩ
1kΩ
(R
1
)
(Ta=25˚C)
–55 to +125
Ratings
–100
–50
–50
125
125
100kΩ
5.1kΩ
4.7kΩ
10kΩ
22kΩ
47kΩ
47kΩ
10kΩ
10kΩ
22kΩ
10kΩ
10kΩ
47kΩ
(R
2
)
Note.) The Part numbers in the Parenthesis show conventional part number.
Unit
mW
mA
˚C
˚C
V
V
Internal Connection
B
R1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
R2
1
2
0.4
0.80
0.425 0.425
1.60±0.05
0.85
1.6±0.15
0.8±0.1
+0.05
–0.03
0.80±0.05
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
0.2±0.1
0.4
3
C
E
Unit: mm
Unit: mm
1

Related parts for UNR9118

UNR9118 Summary of contents

Page 1

... Marking Symbol G UNR9111 6A 10kΩ G UNR9112 6B 22kΩ G UNR9113 6C 47kΩ G UNR9114 6D 10kΩ G UNR9115 6E 10kΩ G UNR9116 6F 4.7kΩ G UNR9117 6H 22kΩ G UNR9118 6I 0.51kΩ G UNR9119 6K G UNR9110 6L 47kΩ G UNR911D 6M 47kΩ G UNR911E 6N 47kΩ G UNR911F 6O 4.7kΩ G UNR911H 6P 2.2kΩ G UNR911L 6Q 4.7kΩ ...

Page 2

... UNR9118/911L Collector to emitter saturation voltage Output voltage high level Output voltage low level UNR9113/UNR911BJ UNR911D UNR911E UNR911AJ Transition frequency UNR911AJ UNR9111/9114/9115 UNR9112/9117 UNR9113/9110/911D/911E Input UNR9116/911F/911L resis- UNR9118 tance UNR9119 UNR911H UNR911AJ/911BJ * h rank classification (UNR9115/9116/9117/9110) FE Rank 160 to 260 210 to 340 FE 2 UNR9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/911AJ/911BJ/911CJ (Ta=25˚ ...

Page 3

... Transistors with built-in Resistor I Electrical Characteristics (continued) Parameter UNR9111/9112/9113/911L UNR9114 UNR9118/9119 UNR911D Resis- tance UNR911E ratio UNR911F UNR911H UNR911AJ Resistance between Emitter to Base UNR911CJ UNR9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/911AJ/911BJ/911CJ (Ta=25˚C) Symbol Conditions min typ max Unit 0.8 1.0 1.2 0.17 0.21 0.25 0.08 0.1 0.12 4.7 2.14 0.47 0.17 0.22 0.27 1.0 –30% 47 30% 3 ...

Page 4

Transistors with built-in Resistor Common characteristics chart P — 150 125 100 100 120 140 160 Ambient temperature Ta ( ˚C ) Characteristics charts of UNR9111 I — V ...

Page 5

Transistors with built-in Resistor Characteristics charts of UNR9112 I — –160 Ta=25˚C I =–1.0mA B –140 –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA – –2 –4 –6 –8 ...

Page 6

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 7

Transistors with built-in Resistor Characteristics charts of UNR9115 I — –160 Ta=25˚C I =–1.0mA –140 B –0.9mA –0.8mA –0.7mA –120 –0.6mA –100 –0.5mA –0.4mA –80 –0.3mA –60 –0.2mA –40 –0.1mA – –2 –4 –6 –8 ...

Page 8

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 9

... Transistors with built-in Resistor Characteristics charts of UNR9118 I — –240 Ta=25˚C –200 I =–1.0mA B –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 – ...

Page 10

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 11

Transistors with built-in Resistor Characteristics charts of UNR911D I — – –1.0mA Ta=25˚C B – 0.9mA – 0.8mA – 50 – 40 – 0.3mA – 30 – 0.2mA – 0.7mA – 0.6mA – 0.5mA ...

Page 12

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 13

Transistors with built-in Resistor Characteristics charts of UNR911H I — –120 Ta=25˚C –100 –80 I =–0.5mA B –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 – Collector to ...

Page 14

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –1 –3 –10 –30 –100 ( V ) Collector to base voltage UNR9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/911AJ/911BJ/911CJ V — ...

Page 15

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

Related keywords