UNR211M Panasonic Corporation of North America, UNR211M Datasheet

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UNR211M

Manufacturer Part Number
UNR211M
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UNR211M
Quantity:
9 000
Transistors with built-in Resistor
UNR211x Series
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• Mini type package allowing easy automatic insertion through tape
• UNR2110 (UN2110)
• UNR2111 (UN2111)
• UNR2112 (UN2112)
• UNR2113 (UN2113)
• UNR2114 (UN2114)
• UNR2115 (UN2115)
• UNR2116 (UN2116)
• UNR2117 (UN2117)
• UNR2118 (UN2118)
• UNR2119 (UN2119)
• UNR211D (UN211D)
• UNR211E (UN211E)
• UNR211F (UN211F)
• UNR211H (UN211H)
• UNR211L (UN211L)
• UNR211M (UN211M)
• UNR211N (UN211N)
• UNR211T (UN211T)
• UNR211V (UN211V)
• UNR211Z (UN211Z)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts
packing and magazine packing
Parameter
Marking Symbol (R
6L
6E
6F
6H
6I
6K
6M
6O
6P
6Q
EI
EW
EY
FC
FE
6A
6B
6C
6D
6N
Symbol
V
V
0.51 kΩ
T
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
P
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
22 kΩ
I
T
CBO
CEO
a
stg
1 kΩ
C
T
j
= 25°C
1
)
−55 to +150
Rating
−100
−50
−50
200
150
Note) The part numbers in the parenthesis show conventional part number.
(UN211x Series)
5.1 kΩ
4.7 kΩ
2.2 kΩ
22 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
47 kΩ
47 kΩ
47 kΩ
SJH00006CED
(R
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
B
0.40
3
2
+0.10
–0.05
R
R
1
2
Mini3-G1 Package
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
1

Related parts for UNR211M

UNR211M Summary of contents

Page 1

... UNR2119 (UN2119) 6K • UNR211D (UN211D) 6M • UNR211E (UN211E) 6N • UNR211F (UN211F) 6O • UNR211H (UN211H) 6P • UNR211L (UN211L) 6Q • UNR211M (UN211M) EI • UNR211N (UN211N) EW • UNR211T (UN211T) EY • UNR211V (UN211V) FC • UNR211Z (UN211Z) FE ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...

Page 2

UNR211x Series ■ Electrical Characteristics T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR2110/2115/2116/2117 cutoff current UNR2113 (Collector open) UNR2112/2114/211D/ 211E/211M/211N/211T UNR211Z UNR2111 UNR211F/211H UNR2119 UNR2118/211L/211V Forward ...

Page 3

... Electrical Characteristics (continued) T Parameter Resistance ratio UNR211M UNR211N UNR2118/2119 UNR211Z UNR2114 UNR211H UNR211T UNR211F UNR211V UNR2111/2112/2113/211L UNR211E UNR211D Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  250 200 ...

Page 4

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR2111 ...

Page 5

Characteristics charts of UNR2112  −160 = 25° −1 − 0.9mA − 0.8mA −120 − 0.7mA − 0.6mA − 0.5mA −80 − 0.4mA − 0.3mA − 0.2mA −40 − 0.1mA ...

Page 6

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR2114 ...

Page 7

Characteristics charts of UNR2115  −160 = 25° −1 − 0.9 mA − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − ...

Page 8

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR2117 ...

Page 9

Characteristics charts of UNR2118  −240 = 25° −200 = − 1 − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA −80 − ...

Page 10

UNR211x Series  MHz 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR211D ...

Page 11

Characteristics charts of UNR211E  −60 = −1 25° − 0.9 mA − 0.8 mA − 0.7 mA −50 −40 − 0.3 mA −30 − 0.2 mA − 0.6 mA ...

Page 12

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR211H ...

Page 13

... MHz = 25° −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR211M  −240 = 25° −200 = −1 − 0.9 mA − 0.8 mA − 0.7 mA −160 − 0.6 mA −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − ...

Page 14

UNR211x Series  MHz = 25° −0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR211N  V ...

Page 15

Characteristics charts of UNR211T  −200 = 25° −150 = −1 –0.9 mA –0.8 mA −100 –0.7 mA –0.6 mA –0.5 mA − 0.4 mA −50 − 0.3 mA − 0.2 ...

Page 16

UNR211x Series  − − 25° −10 3 −10 2 −10 −1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 Input voltage V (V) IN Characteristics charts of UNR211Z  ...

Page 17

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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