UNR5174 Panasonic Corporation of North America, UNR5174 Datasheet

UNR5174

Manufacturer Part Number

UNR5174

Description

Transistor With Builtin Resistors

Manufacturer

Panasonic Corporation of North America

Datasheet

1.UNR5174.pdf (3 pages)

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Transistors with built-in Resistor

UNR5174

Silicon PNP epitaxial planar type

For digital circuits

■ Features

■ Absolute Maximum Ratings T

■ Electrical Characteristics T

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: December 2003

• High forward current transfer ratio h

• Costs can be reduced through downsizing of the equipment and

• S-Mini type package, allowing downsizing of the equipment and

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Total power dissipation

Junction temperature

Storage temperature

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

Output voltage low-level

Input resistance

Resistance ratio

Forward voltage

Transition frequency

reduction of the number of parts.

automatic insertion through tape packing and magazine packing

Parameter

Symbol

= 25°C ± 3°C

CE(sat)

CBO

CEO

EBO

CBO

CEO

CBO

CEO

stg

/ R

= 25°C

−55 to +150

Rating

−100

−50

150

= 100 mA

= −10 µA, I

= −2 mA, I

= −10 mA, I

SJH00046BED

= −50 V, I

= −6 V, I

= −10 V, I

= −5 V, V

= −10 V, I

Conditions

Unit

°C

= 0

= − 0.3 mA

= − 0.5 V, R

= −2.5 V, R

= 0

= −5 mA

= 1 mA, f = 200 MHz

Marking Symbol: 7P

Internal Connection

= 1 kΩ

10˚

0.3

(0.65) (0.65)

+0.1

–0.0

1.3

2.0

±0.1

±0.2

−30%

−4.9

0.17

Min

−50

(10 kΩ)

(47 kΩ)

0.21

0.95

Typ

SMini3-G1 Package

− 0.25

+30%

− 0.1

− 0.5

− 0.2

Max

0.25

1.20

0.15

EIAJ: SC-70

1: Base

2: Emitter

3: Collector

Unit : mm

+0.10

–0.05

MHz

Unit

µA

kΩ



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UNR5174 Summary of contents

Page 1

... Transistors with built-in Resistor UNR5174 Silicon PNP epitaxial planar type For digital circuits ■ Features • High forward current transfer ratio h • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • S-Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing ■ ...

Page 2

... UNR5174  160 120 120 160 ( °C ) Ambient temperature T a  300 = − 250 = 75° 200 25°C 150 −25°C 100 −1 −10 −10 − Collector current I C  − − ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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