CTA2P1N Diodes, Inc., CTA2P1N Datasheet

CTA2P1N

Manufacturer Part Number

CTA2P1N

Description

Complex Transistor Array

Manufacturer

Diodes, Inc.

Datasheet

1.CTA2P1N.pdf (5 pages)

Current page: 1 of 5
Download datasheet (225Kb)

Mechanical Data

Features

Maximum Ratings, Total Device

Maximum Ratings, Q1, MMBT4403 PNP Transistor Element

Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element

Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Drain-Source Voltage

Drain-Gate Voltage R

Gate-Source Voltage

Drain Current

•

Notes:

DS30296 Rev. 9 - 2

Combines MMBT4403 type transistor with 2N7002 type

MOSFET

Small Surface Mount Package

NPN/P-Channel Complement Available: CTA2N1P

Lead Free/RoHS Compliant (Note 1)

"Green" Device (Note 3 and 4)

Case: SOT-363

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Terminal Connections: See Diagram

Marking Information: A80, See Page 5

Ordering Information: See Page 5

Weight: 0.006 grams (approximate)

1. No purposefully added lead.

2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

http://www.diodes.com/datasheets/ap02001.pdf.

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

Characteristic

≤ 1.0MΩ

Characteristic

(Note 2)

Continuous @ 100°C

Continuous

Pulsed

(Note 2)

= 25°C unless otherwise specified

www.diodes.com

Symbol

1 of 5

DSS

DGR

GSS

Symbol

, T

CBO

CEO

EBO

θ JA

STG

B C

Value

= 25°C unless otherwise specified

-55 to +150

= 25°C unless otherwise specified

115

800

±20

±40

COMPLEX TRANSISTOR ARRAY

Value

-600

150

833

-5.0

-40

CTA2P1N

All Dimens ons in mm

Dim

SOT-363

0.10

1.15

2.00

0.65 Nominal

0.30

1.80

0.90

0.25

0.10

Min

Units

⎯

0°

°C/W

Unit

°C

CTA2P1N

Max

0.30

1.35

2.20

0.40

2.20

0.10

1.00

0.40

0.25

8°

Related parts for CTA2P1N

CTA2P1N Summary of contents

Page 1

... All Dimens ons Value Unit 150 mW °C/W 833 °C -55 to +150 @T = 25°C unless otherwise specified A Value Unit -40 V -40 V -5.0 V -600 25°C unless otherwise specified A Value Units ±20 V ±40 115 73 mA 800 CTA2P1N © Diodes Incorporated Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° ...

Page 2

... GS D Ω 4.4 13 10V 0. 1.0 ⎯ 10V 7. ⎯ ⎯ =10V 0. 25V 1.0MHz 2.0 5 30V 0.2A 150Ω 10V GEN © Diodes Incorporated = 25Ω GEN CTA2P1N ...

Page 3

... 30mA C 1 0.01 0.1 10 100 I , BASE CURRENT (mA) B Fig. 2 Typical Collector Saturation Region -50° 25° 150° COLLECTOR CURRENT (mA) C Fig. 4 Base-Emitter Voltage vs. Collector Current COLLECTOR CURRENT (mA) C © Diodes Incorporated 100 100 CTA2P1N ...

Page 4

... V = 10V 200mA 120 145 0 ° Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002 www.diodes.com 5. 10V GS 0.2 0.4 0.6 0 DRAIN CURRENT ( 500mA 50mA GATE TO SOURCE VOLTAGE (V) GS © Diodes Incorporated ° 1.0 18 CTA2P1N ...

Page 5

... M = Month ex September 2005 2006 2007 2008 Mar Apr May Jun IMPORTANT NOTICE LIFE SUPPORT www.diodes.com Shipping 3000/Tape & Reel 2009 2010 2011 Jul Aug Sep Oct Nov © Diodes Incorporated 2012 Z Dec D CTA2P1N ...

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