JDV2S16S TOSHIBA Semiconductor CORPORATION, JDV2S16S Datasheet

no-image

JDV2S16S

Manufacturer Part Number
JDV2S16S
Description
Toshiba Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
VCO for the UHF band
Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C
Low series resistance: r
This device is suitable for use in a small-size tuner.
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured: V
Characteristic
Characteristic
N
(Ta = 25°C)
s
0.5V
= 0.55 Ω (typ.)
TOSHIBA Diode Silicon Epitaxial Planar Type
/C
2.5V
(Ta = 25°C)
= 2.0 (typ.)
Symbol
JDV2S16S
T
C
V
T
stg
0.5V
R
Symbol
j
C
C
V
0.5V
2.5V
I
r
R
/C
s
R
2.5V
−55~150
sig
I
V
V
V
V
R
Rating
R
R
R
R
150
10
= 1 µA
1
= 10 V
= 0.5 V, f = 1 MHz
= 2.5 V, f = 1 MHz
= 1 V, f = 470 MHz
= 100 mVrms
Test Condition
Unit
°C
°C
V
Weight: 0.0011 g (typ.)
JEDEC
JEITA
TOSHIBA
3.38
1.67
Min
1.9
10
Typ.
0.55
2.0
JDV2S16S
1-1K1A
2005-08-01
Max
3.8
1.9
2.1
0.7
3
Unit: mm
Unit
nA
pF
V

Related parts for JDV2S16S

JDV2S16S Summary of contents

Page 1

... 0 MHz MHz C V 2.5V R ⎯ 0.5V 2. 470 MHz 100 mVrms sig 1 JDV2S16S Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Min Typ. Max Unit ⎯ ⎯ ⎯ ⎯ ⎯ 3.38 3.8 pF ⎯ ...

Page 2

... JDV2S16S 2005-08-01 ...

Related keywords