NTNUS3171PZ ON Semiconductor, NTNUS3171PZ Datasheet
NTNUS3171PZ
Manufacturer Part Number
NTNUS3171PZ
Description
Ntnus3171pz Product Preview Small Signal Mosfet
Manufacturer
ON Semiconductor
Datasheet
1.NTNUS3171PZ.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTNUS3171PZT5G
Manufacturer:
ON Semiconductor
Quantity:
2 900
Part Number:
NTNUS3171PZT5G
Manufacturer:
ON/安森美
Quantity:
20 000
NTNUS3171PZ
Product Preview
Small Signal MOSFET
−20 V, −180 mA, Single P−Channel,
1.0 x 0.6 mm SOT−1123 Package
Features
•
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
2. Pulse Test: pulse width v300 ms, duty cycle v2%
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. P0
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
Package
Thin Environments such as Portable Electronics.
Single P−Channel MOSFET
Offers a Low R
1.5 V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
This is a Pb−Free Device
High Side Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Equipment
1 oz Cu.
(Note 1)
(1/8” from case for 10 s)
Parameter
DS(on)
(T
t v 5 s
t v 5 s
Steady
Steady
Solution in the Ultra Small 1.0 x 0.6 mm
J
State
State
= 25°C unless otherwise specified)
T
T
T
T
t
p
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
V
T
V
I
P
T
DSS
STG
T
I
DM
I
GS
D
S
J
D
L
,
−55 to
Value
−140
−100
−180
−125
−200
−600
−200
−20
150
260
±8
1
Unit
mW
mA
mA
mA
°C
°C
V
V
†For information on tape and reel specifications,
NTNUS3171PZT5G SOT−1123
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 524AA
3
(BR)DSS
−20 V
SOT−1123
Device
ORDERING INFORMATION
1
5
M
G
2
http://onsemi.com
3.5 W @ −4.5 V
4.0 W @ −2.5 V
5.5 W @ −1.8 V
7.0 W @ −1.5 V
= Specific Device Code
(Rotated 90° Clockwise)
= Date Code
R
DS(ON)
P−Channel
MOSFET
(Pb−Free)
Package
Publication Order Number:
D
S
MAX
NTNUS3171PZ/D
8000/Tape & Reel
MARKING
DIAGRAM
Shipping
5 M
−0.18 A
I
D
Max
†
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NTNUS3171PZ Summary of contents
Page 1
... P−Channel MOSFET ORDERING INFORMATION Device Package Shipping NTNUS3171PZT5G SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTNUS3171PZ/D Max † ...
Page 2
THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – (Note 3) 3. Surface−mounted on FR4 board using the minimum recommended pad size Cu. ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown ...
Page 3
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTNUS3171PZ/D ...