2MBI75P-140

Manufacturer Part Number2MBI75P-140
Description1400v / 75a 2 In One-package Igbt Module P-series
ManufacturerFuji Electric holdings CO.,Ltd
2MBI75P-140 datasheet
 
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2MBI75P-140
IGBT Module P-Series
1400V / 75A 2 in one-package
Features
· Small temperature dependence of the turn-off switching loss
· Easy to connect in parallel
· Wide RBSOA (square up to 2 time of rated current) and high short-
circuit withstand capability
· Low loss and soft-switching (reduction of EMI noise)
Applications
· General purpose inverter
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
*
All terminals should be connected together when isolation test will be done.
1 :
*
Recommendable value : 2.5 to 3.5 N·m(M5)
2 :
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols
Zero gate voltage collector current
I
CES
Gate-Emitter leakage current
I
GES
Gate-Emitter threshold voltage
V
GE(th)
Collector-Emitter saturation voltage
V
CE(sat)
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer capacitance
C
res
Turn-on time
t
on
t
r
Turn-off time
t
off
t
f
Diode forward on voltage
V
F
Reverse recovery time
t
rr
Thermal resistance characteristics
Items
Symbols
Thermal resistance
Rth(j-c)
Rth(j-c)
Contact Thermal resistance
Rth(c-f)*
*
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
4
Conditions
Symbol
V
CES
V
GES
Continuous
I
C
1ms
I
p
C
-I
C
-I
pulse
C
1 device
P
C
T
j
T
stg
AC:1min.
V
iso
Mounting *
2
Terminals *
2
Conditions
V
=0V, V
=1400V
GE
CE
V
=0V, V
=±20V
CE
GE
V
=20V, I
=75mA
CE
C
V
=15V, I
=75A, Tj=25°C
GE
C
V
=15V, I
=75A, Tj=125°C
GE
C
V
=10V
CE
V
=0V
GE
f=1MHz
V
=600V
CC
I
=75A
C
V
=±15V
GE
R
=16
G
I
=75A, V
=0V
F
GE
I
=75A
F
Conditions
IGBT
Diode
the base to cooling fin
4
Equivalent Circuit Schematic
C1
C2E1
G1 E1
Rating
Unit
1400
V
±20
V
A
Tc=25°C
100
75
Tc=80°C
200
Tc=25°C
Tc=80°C
150
75
150
W
600
+150
°C
-40 to +125
2500
VAC
3.5
N·m
3.5
Characteristics
Unit
Min.
Typ.
Max.
1.0
200
6.0
8.0
9.0
2.7
3.0
3.3
7500
1000
500
1.20
0.60
1.00
0.30
2.4
3.3
0.35
Characteristics
Unit
Min.
Typ.
Max.
0.21
0.47
0.05
E2
G2 E2
mA
nA
V
V
pF
µs
V
µs
°C/W
°C/W
°C/W

2MBI75P-140 Summary of contents

  • Page 1

    ... IGBT Module P-Series 1400V / 75A 2 in one-package Features · Small temperature dependence of the turn-off switching loss · Easy to connect in parallel · Wide RBSOA (square time of rated current) and high short- circuit withstand capability · Low loss and soft-switching (reduction of EMI noise) Applications · ...

  • Page 2

    ... Characteristics (Representative) IGBT Module ...

  • Page 3

    ... IGBT Module ...

  • Page 4

    ... Outline Drawings, mm M232 IGBT Module ...