6MBI75S-120 Fuji Electric holdings CO.,Ltd, 6MBI75S-120 Datasheet

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6MBI75S-120

Manufacturer Part Number
6MBI75S-120
Description
Igbt Module S Series 1200v / 75a 6 In One-package
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.6MBI75S-120.pdf (4 pages)

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Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
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6MBI75S-120
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Part Number:
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Quantity:
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6MBI75S-120
IGBT MODULE ( S series)
1200V / 75A 6 in one-package
· Compact package
· P.C.board mount
· Low V
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector
current
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
Screw torque
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Item
Thermal resistance
*
1 :
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Electrical characteristics (Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Recommendable value : 2.5 to 3.5 N·m (M5)
Features
Applications
Maximum ratings and characteristics
CE
(sat)
Continuous
1ms
1ms
Tc=80°C
Tc=25°C
Tc=25°C
Tc=80°C
V
-I
P
T
Mounting *
V
I
-I
T
Symbol
Symbol
I
V
Symbol
C
C
I
I
V
V
C
C
C
t
t
t
t
t
V
t
C
j
C
stg
CES
GES
C
is
CES
GES
on
r
r(i)
off
f
rr
pulse
GE(th)
CE(sat)
F
ies
oes
res
Rth(j-c)
Rth(j-c)
Rth(c-f)*
pulse
2
1
Min.
Min.
Characteristics
Characteristics
Rating
-40 to +125
AC 2500 (1min.)
5.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1200
+150
–
–
–
±20
100
200
150
150
520
75
75
3.5
Typ.
Typ.
9000
1875
1650
0.05
7.2
2.3
2.8
0.35
0.25
0.1
0.45
0.08
2.5
2.0
–
–
–
–
–
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
Max.
Max.
0.24
0.50
1.0
0.2
8.5
2.6
1.2
0.6
1.0
0.3
3.3
0.35
–
–
–
–
–
–
–
Conditions
V
V
V
Tj=25°C
Tj=125°C
V
V
f=1MHz
V
I
V
R
Tj=25°C
Tj=125°C
I
IGBT
FWD
the base to cooling fin
Conditions
C
F
GE
CE
CE
GE
CE
CC
GE
G
=75A
=75A
=16
=0V, V
=20V, I
=0V
=10V
=0V, V
=600V
=±15V
Equivalent Circuit Schematic
21(P)
20(N)
1(Gu)
3(Gx)
4(Ex)
2(Eu)
GE
CE
V
C
I
=75mA
GE
F
=1200V
=±20V
=75A, V
=15V, I
19(U)
GE
5(Gv)
7(Gy)
8(Ey)
C
6(Ev)
=75A
=0V
IGBT Modules
17(V)
9(Gw)
11(Gz)
°C/W
°C/W
°C/W
12(Ez)
Unit
Unit
10(Ew)
mA
µA
V
V
pF
µs
V
µs
15(W)
13(P)
14(N)

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6MBI75S-120 Summary of contents

Page 1

... IGBT MODULE ( S series) 1200V / 75A 6 in one-package Features · Compact package · P.C.board mount · Low V (sat) CE Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25° ...

Page 2

... Characteristics Collector current vs. Collector-Emitter voltage o Tj= 25 200 150 100 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 200 150 100 Collector - Emitter voltage : VCE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 20000 10000 1000 ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V,V ±15V, Rg=16 ,Tj=25 GE= 1000 500 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V,Ic=75A,V 5000 1000 500 100 Gate resistance : Rg [ Switching loss vs. Gate resistance (typ.) Vcc=600V,Ic=75A,V GE Gate resistance : Rg [ ...

Page 4

... Forward current vs. Forward on voltage (typ.) 200 150 100 Forward on voltage : Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width : Pw [ sec ] Outline Drawings, mm 8-R2.25 0.3 0.3 4-ø5.5 300 o o Tj=125 C Tj=25 C 100 FWD IGBT M626 0 122 0.3 110 0.3 94.5 13.09 19.05 19.05 19. 3.81 0.3 99.6 3. ...

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