VP0120 Supertex, Inc., VP0120 Datasheet

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VP0120

Manufacturer Part Number
VP0120
Description
P-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VP0120N5
Manufacturer:
SUPERTEX
Quantity:
6 000
Ordering Information
† MIL visual screening available
Features
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Applications
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Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
BV
BV
-200V
DSS
DGS
ISS
and fast switching speeds
/
R
(max)
DS(ON)
25Ω
-100mA
P-Channel Enhancement-Mode
Vertical DMOS FETs
(min)
I
D(ON)
-55°C to +150°C
BV
BV
300°C
± 20V
DGS
DSS
VP0120N3
Order Number / Package
TO-92
7-223
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
VP0120ND
Die
TO-92
S G D
VP0120
7
9

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VP0120 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 7-223 VP0120 † TO- ...

Page 2

... GS D %/° -10V -100mA -25V -100mA 0V -25V MHz -25V -350mA 25Ω GEN -0.5A -0.5A PULSE GENERATOR R gen INPUT V DD VP0120 I DRM -0.35A = D.U.T. OUTPUT R L ...

Page 3

... 25° 125° -0.8 -1.0 0 1.0 0.8 0.6 0.4 0.2 0 -1000 0.001 7-225 Saturation Characteristics V = -10V GS -8V -6V - (volts) DS Power Dissipation vs. Case Temperature TO- 100 125 150 T (°C) C Thermal Response Characteristics TO- 25°C C 0.01 0 (seconds) p VP0120 7 - ...

Page 4

... On-Resistance vs. Drain Current -10V -0.3 -0.6 -0.9 -1.2 I (amperes and R Variation with Temperature (th -10V, -100mA DS(ON -5V, -50mA DS(ON -1.0mA (th) - 100 T (°C) j Gate Drive Dynamic Characteristics V = -10V DS 100 -40V DS 100 pF 50pF 0 0 0.2 0.4 0.4 0.6 0.8 Q (nanocoulombs) G VP0120 -1.5 2.0 1.6 1.2 0.8 0.4 0 150 1.0 ...

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