VP0350 Supertex, Inc., VP0350 Datasheet

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VP0350

Manufacturer Part Number
VP0350
Description
P-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
05/19/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Ordering Information
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
MIL visual screening available
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
BV
BV
-500V
DSS
DGS
ISS
and fast switching speeds
/
R
(max)
7.5Ω
DS(ON)
P-Channel Enhancement-Mode
Vertical DMOS FETs
(min)
I
D(ON)
-1A
-55°C to +150°C
BV
300°C
BV
± 20V
DGS
DSS
VP0350N1
TO-3
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Order Number / Package
Note: See Package Outline section for dimensions.
VP0350N5
Case: DRAIN
TO-220
TO-3
G
S
VP0350ND
Die
TAB: DRAIN
TO-220
VP0350
G
D S

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VP0350 Summary of contents

Page 1

... Package Options Case: DRAIN BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VP0350 † TO-220 Die VP0350ND TO TO-220 TAB: DRAIN ...

Page 2

... V = -10V -0.25A GS D 1.2 %/° -10V -0.25A -25V -0. 800 -25V GS DS 130 MHz -25V -1A D 100 R = 10Ω GEN -0.25A 0V -0.25A gen INPUT VP0350 I DRM -3.0A -3.0A D.U.T. OUTPUT ...

Page 3

... Saturation Characteristics -10V - (volts) DS Power Dissipation vs. Case Temperature TO TO-220 100 125 T (°C) C Thermal Response Characteristics 1.0 TO-220 P = 50W D 0 25°C C TO-3 0 100W 25°C C 0.4 0.2 0 0.001 0.01 0 (seconds) p VP0350 -8V -6V -5V -10 150 10 ...

Page 4

... DS 1 -10V, -0.25A DS(ON) 1.1 1.0 0.9 0 -10mA (th 100 T (°C) j Gate Drive Dynamic Characteristics - -10V DS -6 800 -40V 500 (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 222-8888 • FAX: (408) 222-4895 VP0350 -5.0 2.0 1.0 0 150 10 05/19/03 www.supertex.com ...

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