VP0535 Supertex, Inc., VP0535 Datasheet

VP0535

Manufacturer Part Number

VP0535

Description

P-channel Enhancement-mode Vertical Dmos Fets

Manufacturer

Supertex, Inc.

Datasheet

1.VP0535.pdf (4 pages)

Current page: 1 of 4
Download datasheet (58Kb)

Ordering Information

†

High Reliability Devices

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

Features

■ ■

Applications

■ ■

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Distance of 1.6 mm from case for 10 seconds.

MIL visual screening available

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

-350V

-400V

ISS

DSS

DGS

and fast switching speeds

(max)

75Ω

DS(ON)

P-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

-200mA

D(ON)

(min)

300°C

± 20V

DGS

DSS

7-237

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

VP0535N2

Note: See Package Outline section for dimensions.

TO-39

—

Case: DRAIN

TO-39

Order Number / Package

D G S

VP0535N3

VP0540N3

TO-92

S G D

VP0535

VP0540

VP0535ND

VP0540ND

Die

†

Related parts for VP0535

VP0535 Summary of contents

Page 1

... Package Options BV DSS Case: DRAIN BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 7-237 VP0535 VP0540 Order Number / Package † TO-92 Die VP0535N3 VP0535ND VP0540N3 VP0540ND TO-92 TO- ...

Page 2

... C C -0.5A 3.5W -0.5A 1.0W Min Typ VP0540 -400 VP0535 -350 -2.5 3.5 -80 -200 -350 -0.8 200 90% t (OFF d(OFF) F 90% 10% 7-238 VP0535/VP0540 θ θ ° ° C/W C/W 35 125 -0.2A 125 170 -0.1A Max Unit Conditions 0V, I =-1mA -1mA 6.0 mV/°C ...

Page 3

... V (volts -10V -8V -0.1 -6V -4V 0 -40 - -55° 25° 150° -0.3 1.0 0.8 0.6 0.4 0.2 0 -1000 0.001 7-239 VP0535/VP0540 Saturation Characteristics -10V -6V - (volts) DS Power Dissipation vs. Case Temperature TO-39 TO- 100 125 T (°C) C Thermal Response Characteristics TO- 3. 25°C ...

Page 4

... C ISS -30 -40 7-240 On-Resistance vs. Drain Current -10V GS 0 -0.1 -0.2 -0.3 -0.4 I (amperes and R Variation with Temperature (th -10V, -50mA DS(ON -1mA (th) - 100 T (°C) j Gate Drive Dynamic Characteristics V = -10V -40V DS -4 150 pF 32pF - 0.2 0.4 0.6 0.8 Q (nanocoulombs) G VP0535/VP0540 -0.5 2.0 1.0 0 150 1.0 ...

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