BPW97

Manufacturer Part NumberBPW97
DescriptionSilicon Pin Photodiode
ManufacturerVishay
BPW97 datasheet
 


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Silicon PIN Photodiode
Description
BPW97 is an extra high speed PIN photodiode in a
hermetically sealed TO–18 package.
Unlike most similar devices, the cathode terminal is
isolated from case and connected to a third terminal,
giving the user all the means to improve shielding of his
system.
Due to its high precision flat glass window and its accu-
rate chip alignment, this device is recommended for
ambitious applications in the optical data transmission
domain.
Features
D
Extra fast response times at low operating volt-
ages
D
Exact central chip alignment
D
Chip insulated
D
Shielded construction
D
Hermetically sealed TO–18 case
D
Flat optical window
D
Wide angle of half sensitivity
=
D
2
Radiant sensitive area A=0.25mm
D
Suitable for visible and near infrared radiation
D
m
Suitable for coupling with 50
m gradient index fi-
ber
Applications
Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs emitters.
Detector for optical communication, e.g. for optical fiber transmission systems with only 5 V power supply.
Absolute Maximum Ratings
_
T
= 25
C
amb
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81533
Rev. 2, 20-May-99
55 °
Test Conditions
Symbol
V
x
25 ° C
T
P
amb
T
x
t
5 s
T
R
www.vishay.de FaxBack +1-408-970-5600
BPW97
Vishay Telefunken
94 8478
Value
Unit
60
V
R
285
mW
V
° C
T
125
j
° C
–55...+125
stg
° C
260
sd
350
K/W
thJA
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BPW97 Summary of contents

  • Page 1

    ... Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his system. ...

  • Page 2

    ... BPW97 Vishay Telefunken Basic Characteristics = amb Parameter Forward Voltage Breakdown Voltage I = 100 R Reverse Dark Current Diode Capacitance MHz Dark Resistance V = 10m Serial Resistance MHz R Reverse Light Current ...

  • Page 3

    ... Figure 5. Diode Capacitance vs. Reverse Voltage –10 10 –11 10 –12 10 –13 10 f;B=1 l =870nm – – Load Resistance ( 94 8450 L Figure 6. Noise Equivalent Power vs. Load Resistance www.vishay.de FaxBack +1-408-970-5600 BPW97 Vishay Telefunken 2 1 mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 2 0.1 mW/cm l =950nm 100 10 E=0 f=1MHz 100 10 f=1000MHz 500MHz 100MHz 10MHz 1MHz ...

  • Page 4

    ... BPW97 Vishay Telefunken =50V R –1 15V –2 – 100 f – Frequency ( MHz ) 94 8451 Figure 7. Relative Sensitivity vs. Frequency 1.0 0.8 0.6 0.4 0.2 0 350 550 750 950 l – Wavelength ( 8452 Figure 8. Relative Spectral Sensitivity vs. Wavelength www.vishay.de FaxBack +1-408-970-5600 4 (6) 1.0 0.9 0.8 0.7 1000 0.6 0.4 0.2 94 8453 Figure 9. Relative Radiant Sensitivity vs. ...

  • Page 5

    ... Dimensions in mm Document Number 81533 Rev. 2, 20-May-99 BPW97 Vishay Telefunken 96 12182 www.vishay.de FaxBack +1-408-970-5600 5 (6) ...

  • Page 6

    ... BPW97 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...