NBB-302 RF Micro Devices, NBB-302 Datasheet

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NBB-302

Manufacturer Part Number
NBB-302
Description
Cascadable Broadband Gaas Mmic Amplifier Dc To 12 Ghz Nbb-302
Manufacturer
RF Micro Devices
Datasheet

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NBB-302
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RFMD
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NBB-302-PCK
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Features
Applications
Rev A6 DS060124
Reliable, Low-Cost HBT Design
12.0dB Gain, +13.7dBm
P1dB@2GHz
High P1dB of
+14.0dBm@6.0GHz and
+11.0dBm@14.0GHz
Single Power Supply Operation
50Ω I/O Matched for High Freq.
Use
Narrow and Broadband Commer-
cial and Military Radio Designs
Linear and Saturated Amplifiers
Gain Stage or Driver Amplifiers
for MWRadio/Optical Designs
(PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellu-
lar/DWDM)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Product Description
The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost,
high-performance solution for general purpose RF and microwave amplification
needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design,
providing unsurpassed performance for small-signal applications. Designed with an
external bias resistor, the NBB-302 provides flexibility and stability. The NBB-302 is
packaged in a low-cost, surface-mount ceramic package, providing ease of assem-
bly for high-volume tape-and-reel requirements. It is available in either packaged or
chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit
designs.
Ordering Information
NBB-302
NBB-302-T1
NBB-302-E
NBB-X-K1
GaAs HBT
GaAs MESFET
InGaP HBT
Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz
Tape & Reel, 1000 Pieces
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
Indicator
RF OUT
Ground
Pin 1
SiGe BiCMOS
Si BiCMOS
SiGe HBT
Functional Block Diagram
GaAs MMIC AMPLIFIER DC TO 12GHz
Package Style: MPGA, Bowtie, 3x3, Ceramic
1
8
7
2
9
6
RoHS Compliant & Pb-Free Product
CASCADABLE BROADBAND
GaAs pHEMT
Si CMOS
Si BJT
3
4
5
Ground
RF IN
NBB-302
GaN HEMT
1 of 8

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NBB-302 Summary of contents

Page 1

... This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-302 provides flexibility and stability. The NBB-302 is packaged in a low-cost, surface-mount ceramic package, providing ease of assem- bly for high-volume tape-and-reel requirements available in either packaged or chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit designs ...

Page 2

... NBB-302 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Overall Small Signal Power Gain, S21 12.0 11.0 9.0 Gain Flatness, GF Input and Output VSWR ...

Page 3

... Rev A6 DS060124 . The resistor is selected to set the – V DEVICE I CC Package Drawing 0.025 min 0.125 max 1.00 min 1.50 max Pin 1 Indicator RF OUT Ground 0.38 nom All Dimensions in Millimeters NBB-302 Interface Schematic RF IN 0.50 nom 0.50 nom Ground RF IN 0.98 min 1.02 max 0.37 min 0.63 max RF OUT ...

Page 4

... NBB-302 Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. In Recommended Bias Resistor Values Supply Voltage Bias Resistor, R (Ω Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip ...

Page 5

... NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers • 2 Broadband Evaluation Boards and High Frequency SMA Connectors • Broadband Bias Instructions and Specification Summary Index for ease of operation 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A6 DS060124 NBB-X-K1 NBB-302 ...

Page 6

... NBB-302 FLANGE HUB All dimensions in mm 0.30 ± 0.05 R0.3 MAX. Ko SECTION A-A NOTES sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 100 mm. 3. Material: PS and Bo measured on a plane 0.3 mm above the bottom of the pocket measured from a plane on the inside bottom of the pocket to the surface of the carrier. ...

Page 7

... Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A6 DS060124 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 55.00 60.00 2.0 (mA) 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 Pout (dBm) -2.0 Gain (dB) -4.0 0.0 2.0 4.0 6.0 -12.0 -10.0 12.0 14.0 16.0 NBB-302 P1dB versus Frequency at +25°C 4.0 6.0 8.0 10.0 12.0 14.0 Frequency (GHz) P /Gain versus GHz OUT IN Pout (dBm) Gain (dB) -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 P (dBm) IN 16.0 6 ...

Page 8

... NBB-302 Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S11 versus Frequency at +25°C ...

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