PF1010DF8 Korea Electronics (KEC GROUP), PF1010DF8 Datasheet
PF1010DF8
Manufacturer Part Number
PF1010DF8
Description
Tvs Diode For Esd Protection
Manufacturer
Korea Electronics (KEC GROUP)
Datasheet
1.PF1010DF8.pdf
(2 pages)
2006. 8. 8
For EMI Filtering and ESD Protection.
FEATURES
APPLICATIONS
MAXIMUM RATING (Ta=25
ELECTRICAL CHARACTERISTICS (Ta=25
Power Dissipation
Operating Temperature
Storage Temperature
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Attenuation Frequency
Resistance
Capacitance
EMI/RFI filtering.
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
Good attenuation of high frequency signals.
Low clamping voltage.
Low operating and leakage current.
Four elements in one package
Cell phone handsets.
RF communications equipment.
CHARACTERISTIC
CHARACTERISTIC
Revision No : 2
SEMICONDUCTOR
)
TECHNICAL DATA
SYMBOL
SYMBOL
T
P
V
T
f
V
stg
f
D
25dB
RWM
j
I
3dB
R
C
BR
R
-55 150
-55 150
RATING
I
V
V
V
Between Input and Output
V
)
t
300
=1mA
RWM
R
R
R
=0V, Z
=0V, Z
=2.5V, Between I/O Pins and GND
=3V
EQUIVALENT CIRCUIT
FILTERn*
SOURCE
SOURCE
TEST CONDITION
UNIT
mW
=50 , Z
=50 , Z
-
GND
LOAD
LOAD
10pF
=50
=50
D
100Ω
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
Side View
Top View
B
Silicon Planar Type Diode
MIN.
800
PF1010DF8
6
-
-
-
-
-
10pF
DFN-8
A
C
G
TYP.
150
100
20
-
-
-
-
DIM
A
B
C
D
G
H
E
F
I
Bottom View
GND PAD
F
1
8
H
MILLIMETERS
MAX.
3,000
0.75 0.05
FILTERn*
0.23
0.35 0.05
0.1
2.0 0.05
2.0 0.05
0.2 0.02
H
1.2 0.05
0.6 0.05
5
-
-
-
-
+ _
+ _
+ _
+ _
E
+ _
+ _
+ _
+ _
5
4
0.05
UNIT
MHz
MHz
pF
V
V
A
I
1/2
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PF1010DF8 Summary of contents
Page 1
... RWM f V =0V 3dB R SOURCE f V =0V 25dB R SOURCE R Between Input and Output V =2.5V, Between I/O Pins and GND C R PF1010DF8 Silicon Planar Type Diode GND PAD Top View Bottom View DIM MILLIMETERS Side View ...
Page 2
... REVERSE VOLTAGE V R (V) 2006 Revision PF1010DF8 -10 -15 -20 -25 -30 -35 -40 - 100 1000 FREQUENCY (MHz) 6000 2/2 ...