PF1010TEV Korea Electronics (KEC GROUP), PF1010TEV Datasheet
PF1010TEV
Manufacturer Part Number
PF1010TEV
Description
Tvs Diode For Esd Protection
Manufacturer
Korea Electronics (KEC GROUP)
Datasheet
1.PF1010TEV.pdf
(2 pages)
2007. 5. 23
For EMI Filtering and ESD Protection.
FEATURES
APPLICATIONS
MAXIMUM RATING (Ta=25
* Total Package Power Dissipation
ELECTRICAL CHARACTERISTICS (Ta=25
EQUIVALENT CIRCUIT
DC Power Per Resistor
Power Dissipation
Junction Temperature
Storage Temperature
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Attenuation
Resistance
Capacitance
EMI/RFI filtering.
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
Good attenuation of high frequency signals.
Low clamping voltage.
Low operating and leakage current.
Cell phone handsets.
RF communications equipment.
FILTERn*
CHARACTERISTIC
CHARACTERISTIC
10pF
100Ω
GND
Revision No : 1
SEMICONDUCTOR
)
10pF
TECHNICAL DATA
SYMBOL
SYMBOL
*P
P
T
T
V
S
V
f
R
D
FILTERn*
j
stg
RWM
I
3dB
R
C
21
BR
R
2
-55 150
RATING
I
V
V
V
Z
Between Input and Output
V
)
t
100
200
150
=1mA
SOURCE
RWM
R
R
R
=0V, Z
=0V, f = 800MHz~3GHz,
=2.5V, Between I/O Pins and GND
=3V
=50 , Z
SOURCE
TEST CONDITION
UNIT
mW
=50 , Z
LOAD
-
=50
LOAD
MARKING
=50
T 2
1
2
3
P
MIN.
PF1010TEV
25
6
-
-
-
-
-
EMI Filtering TVS
B1
Type Name
B
TESV
P
TYP.
150
100
20
5
4
-
-
-
-
1,5 : Filter channel 1
3,4 : Filter channel 2
DIM
MAX.
A1
B1
2 : GND
A
B
C
D
H
P
J
0.1
5
-
-
-
-
-
MILLIMETERS
0.12 0.05
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.2 0.05
0.5 0.05
0.50
+ _
+ _
+ _
+ _
5
+ _
+ _
+ _
UNIT
MHz
dB
pF
V
V
A
1/2
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PF1010TEV Summary of contents
Page 1
... I V =3V R RWM f V =0V 3dB R SOURCE V =0V 800MHz~3GHz = SOURCE LOAD R Between Input and Output V =2.5V, Between I/O Pins and GND C R PF1010TEV EMI Filtering TVS TESV MARKING Type Name T 2 MIN. TYP 150 =50 LOAD 25 ...
Page 2
... C J 2.0 1.5 1.0 0.5 0 REVERSE VOLTAGE 1,000 100 REVERSE VOLTAGE V 2007 Revision PF1010TEV - ( 110 108 106 104 102 100 -40 - AMBIENT TEMPERATURE 2/2 ...