RDS035L03 ROHM Co. Ltd., RDS035L03 Datasheet

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RDS035L03

Manufacturer Part Number
RDS035L03
Description
Switching 30v, 3.5a
Manufacturer
ROHM Co. Ltd.
Datasheet

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Manufacturer
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Part Number:
RDS035L03
Manufacturer:
STM
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550
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RDS035L03
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ROHM/罗姆
Quantity:
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RDS035L03TB
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HUALIAN
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Part Number:
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Quantity:
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Transistors
Switching (30V, 3.5A)
RDS035L03
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
Switching
Silicon N-channel
MOS FET
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Total Power Dissipation(Tc=25˚C)
Channel Temperature
Storage Temperature
Features
Application
Structure
Equivalent circuit
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Absolute maximum ratings (Ta=25 C)
A protection diode is included between the gate
Gate Protection Diode.
(8)
(1)
Pw 10ms, Duty cycle 1%
(7)
Parameter
(2)
(6)
(3)
(5)
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
(4)
(1) Tr1
(2) Tr1
(3) Tr2
(4) Tr2
(5) Tr2
(6) Tr2
(7) Tr1
(8) Tr1
(8) (7) (6) (5)
(1) (2) (3) (4)
Source
Gate
Source
Gate
Drain
Drain
Drain
Drain
Symbol
V
V
Tstg
I
Tch
I
I
I
DRP
P
sp
GSS
I
DSS
DP
DR
I
D
s
D
55
Limits
±20
150
3.5
3.5
1.3
5.2
30
14
14
2
150
External dimensions (Units : mm)
ROHM : SOP8
Unit
˚C
˚C
W
V
V
A
A
A
A
A
A
( 5 )
( 8 )
3.9 0.15
6.0 0.3
0.5 0.1
Max.1.75
( 4 )
( 1 )
Each lead has same dimensions
1.5 0.1
0.15
RDS035L03

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RDS035L03 Summary of contents

Page 1

... Total Power Dissipation(Tc=25˚C) P Channel Temperature Tch Storage Temperature Tstg Pw 10ms, Duty cycle 1% External dimensions (Units : mm ROHM : SOP8 Limits Unit 30 V DSS ± 150 ˚C 55 150 ˚C RDS035L03 Max.1. 0.15 3.9 0.15 1.5 0.1 6.0 0.3 0.5 0.1 Each lead has same dimensions ...

Page 2

... f=1MHz =2A =10V =7 = =15V DD 1 =10V GS 1 =3.5A D Min. Typ. Max. Unit Test Conditions 1 =3.5A =3.5A di/dt=50A/ s RDS035L03 =0V DS =0V =0V GS =1mA =10V =4.5V =4V =10V 15V =0V =0V GS ...

Page 3

... Channel Temperature 1000 Ta=25˚C f=1MHz V = iss 100 C oss C rss 10 0 100 (V) DRAIN-SOURCE VOLTAGE : V DS Fig.8 Typical Capacitance vs. Drain-Source Voltage RDS035L03 1 0.1 Ta=125˚C 75˚C 25˚C 25˚C 0. 4.5V GS Pulsed 0.001 0 (A) DRAIN CURRENT : I D Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) 0.6 Ta=25˚C Pulsed 0 ...

Page 4

... Fig.10 Switching Characteristics 10 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 Tc=25˚C D=0.02 th (ch-c) D=0.01 0.01 =6.25˚ (ch-c) D=Single PW 0.001 10 100 1m 10m 100m 1 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25˚C 10V 6.0V Pulsed 8.0V 5.0V 4.0V 5 3.5V 3.0V V =2. (V) DRAIN-SOURCE VOLTAGE : V DS Fig.11 Typical Output Characteristics (t)=r (t) th (ch- 100 RDS035L03 ...

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