RT3WLMM ISAHAYA ELECTRONICS CORPORRATION, RT3WLMM Datasheet
RT3WLMM
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RT3WLMM Summary of contents
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... PRELIMINARY DESCRIPTION RT3WLMM is a composite transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify application MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER Collector to Base voltage ...
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... CE E (Tr1) V =6V,I =0,f=1MH (Tr2) V =-6V,I =0,f=1MH (Tr1) V =6V,I =-0.1mA,f=1kH ,R =2kΩ (Tr2) V =-6V,I =0.3mA,f=100H ,R =10kΩ Item hFE RT3WLMM Composite Transistor Silicon Epitaxial Type Limits Unit Min Typ Max 0.1 μ 0.1 μA 150 - 500 - 0 200 ...
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... IB 250 200 150 100 100 1000 10 100 ISAHAYA ELECTRONICS CORPORATION RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type COMMON EMITTER TRANSFER Ta=25℃ VCE= 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ ...
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... IB 250 200 150 100 50 0 -100 -1000 -10 -100 ISAHAYA ELECTRONICS CORPORATION RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type COMMON EMITTER TRANSFER Ta=25℃ VCE=-6V -0.0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ VCE=-6V ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...