RT3N55M ISAHAYA ELECTRONICS CORPORRATION, RT3N55M Datasheet
RT3N55M
Related parts for RT3N55M
RT3N55M Summary of contents
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... PRELIMINARY DESCRIPTION RT3N55M is a composite transistor built with two RT1N144 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER ...
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... I =10mA,I =5mA =0.2V,I =5mA =5V,I =100μ =6V,I =-10mA CE E 1000 100 10 100 (mA) C 1.6 2.0 (V) I(OFF) RT3N55M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Limits Min Typ 0.1 - 1.0 0.4 0 4.2 4.7 - 200 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT V = COLLECTOR CURRENT I ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...