RT3AMMM ISAHAYA ELECTRONICS CORPORRATION, RT3AMMM Datasheet

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RT3AMMM

Manufacturer Part Number
RT3AMMM
Description
Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RT3AMMM-T111-1
Manufacturer:
MITSUBIS
Quantity:
20 000
Company:
Part Number:
RT3AMMM-T111-1F
Quantity:
2 440
Company:
Part Number:
RT3AMMM-T111-1F
Quantity:
2 440
DESCRIPTION
FEATURE
APPLICATION
MAXIMUM RATING (Ta=25℃)
PRELIMINARY
RT3AMMM is a composite transistor built with two
2SA1235A chips in SC-88 package.
Silicon pnp epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
For low frequency amplify application
SYMBOL
V
V
V
I
P
T
T
C
CBO
EBO
CEO
C
j
stg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Total,Ta=25℃)
Junction temperature
Storage temperature
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
-55~+125
RATING
+125
-200
150
-60
-50
-6
OUTLINE DRAWING
UNIT
mW
mA
V
V
V
Tr1
MARKING
For Low Frequency Amplify Application
2.1
1.25
Tr2
.
A M
6
Silicon Pnp Epitaxial Type
RT3AMMM
5
2
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
JEITA:SC-88
Composite Transistor
M
4
3
Unit:mm

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RT3AMMM Summary of contents

Page 1

... PRELIMINARY DESCRIPTION RT3AMMM is a composite transistor built with two 2SA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify application MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER Collector to Base voltage ...

Page 2

... E V =-6V =-6V,I =-1mA =-6V,I =-0.1mA =-100mA,I =-10mA =-6V,I =10mA =-6V,I =0,f=1MH =6V,I =0.3mA,f=100H ,R =10kΩ RT3AMMM Composite Transistor Silicon Pnp Epitaxial Type Limits Unit Min Typ Max - -0.1 μ -0.1 μA 150 - 500 - -0 200 - 4 ...

Page 3

... IB 250 200 150 100 50 0 -100 -1000 -10 -100 RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type COMMON EMITTER TRANSFER Ta=25℃ VCE=-6V -0.0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ VCE=-6V 0.1 ...

Page 4

Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...

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