RT3AMMM

Manufacturer Part NumberRT3AMMM
DescriptionComposite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type
ManufacturerISAHAYA ELECTRONICS CORPORRATION
RT3AMMM datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (134Kb)Embed
Next
PRELIMINARY
DESCRIPTION
RT3AMMM is a composite transistor built with two
2SA1235A chips in SC-88 package.
FEATURE
Silicon pnp epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
For low frequency amplify application
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
Collector to Base voltage
V
CBO
Emitter to Base voltage
V
EBO
Collector to Emitter voltage
V
CEO
Collector current
I
C
Collector dissipation(Total,Ta=25℃)
P
C
Junction temperature
T
j
Storage temperature
T
stg
ISAHAYA ELECTRONICS CORPORATION
For Low Frequency Amplify Application
OUTLINE DRAWING
Tr1
RATING
UNIT
MARKING
-60
V
-6
V
-50
V
-200
mA
150
mW
+125
-55~+125
RT3AMMM
Composite Transistor
Silicon Pnp Epitaxial Type
Unit:mm
2.1
1.25
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
Tr2
⑤:BASE2
⑥:COLLECTOR1
JEITA:SC-88
6
5
4
A M
M
.
2
3

RT3AMMM Summary of contents

  • Page 1

    ... PRELIMINARY DESCRIPTION RT3AMMM is a composite transistor built with two 2SA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify application MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER Collector to Base voltage ...

  • Page 2

    ... E V =-6V =-6V,I =-1mA =-6V,I =-0.1mA =-100mA,I =-10mA =-6V,I =10mA =-6V,I =0,f=1MH =6V,I =0.3mA,f=100H ,R =10kΩ RT3AMMM Composite Transistor Silicon Pnp Epitaxial Type Limits Unit Min Typ Max - -0.1 μ -0.1 μA 150 - 500 - -0 200 - 4 ...

  • Page 3

    ... IB 250 200 150 100 50 0 -100 -1000 -10 -100 RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type COMMON EMITTER TRANSFER Ta=25℃ VCE=-6V -0.0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ VCE=-6V 0.1 ...

  • Page 4

    Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...