RT3T14M ISAHAYA ELECTRONICS CORPORRATION, RT3T14M Datasheet - Page 2

• Manufacturer Part Number: RT3T14M
• Description: Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS （Tｒ１）
V
I
h
V
V
V
R
R
f
T
CBO
FE
(BR)CEO
CE(sat)
I(ON)
I(OFF)
1
2
Symbol
/R
1
1000
100
10
0.0
0.1
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
10
1
1
VCE=5V
Input on voltage-collector current
collector current-Input off voltage
VCE=0.2V
0.4
Input off voltage ＶＩ（ＯＦＦ）（Ｖ）
collector current ＩＣ（ｍＡ）
Parameter
0.8
ISAHAYA ELECTRONICS CORPORATION
10
1.2
1.6
I
V
V
I
V
V
-
-
V
C
C
CB
CE
CE
CE
CE
100
=100μA,R
=10mA,I
2.0
=5V,I
=0.2V,I
=5V,I
=6V,I
=50V,I
C
C
E
=5mA
=100μA
=-10mA
B
E
C
1000
=5mA
Test conditions
=0
=5mA
BE
100
10
=∞
DC forward current Gain -collector current
1
VCE=5V
collector current ＩＣ（ｍＡ）
Tr1
Tr2
Composite Transistor With Resistor
Composite Transistor With Resistor
10
Min
0.4
4.2
50
50
7
-
-
-
-
For Switching Application
For Switching Application
RT3T14M
RT3T14M
Silicon Epitaxial Type
Silicon Epitaxial Type
Limits
Typ
200
150
4.7
0.1
1.0
0.7
10
-
-
-
Max
5.1
0.1
0.3
1.8
13
100
-
-
-
-
MH
Unit
μA
kΩ
V
V
V
V
-
-
Z