RT3T33M ISAHAYA ELECTRONICS CORPORRATION, RT3T33M Datasheet
RT3T33M
Related parts for RT3T33M
RT3T33M Summary of contents
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... PRELIMINARY DESCRIPTION RT3T33M is a composite transistor built with RT1N441 chip and RT1P441 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit MAXIMUM RATING (Ta=25 ℃) SYMBOL ...
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... V =5V,I =5mA =10mA,I =5mA =0.2V,I =5mA =5V,I =100μ =6V,I =-10mA forward current gain-Collector current 1000 100 -100 -1.2 -1.6 -2 RT3T33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type Limits Min Typ Max 0 0.1 0.3 - 2.2 5.0 0.8 1 0.9 1.0 1.1 - 150 - -10 -100 Collector current Ｉ Ｃ （ ｍＡ ） ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...