RT3T55M ISAHAYA ELECTRONICS CORPORRATION, RT3T55M Datasheet
RT3T55M
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RT3T55M Summary of contents
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... PRELIMINARY DESCRIPTION RT3T55M is a composite transistor built with RT1N141 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ※PNP built in transistor of ”−”sign is abbreviation. ...
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... C=5mA CE I =10mA,I =0.5mA =0.2V，I =5mA =5V，I =100µ =6V,I =-10mA CE E 1000 VCE=5V 100 10 100 1 1.6 2.0 RT3T55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type Limits Min Typ Max 0 0.1 0.3 Tr1 1.5 3.0 Tr2 0.9 1.7 Tr1 0.8 1.1 Tr2 0.5 0.7 Tr1 7 ...
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... Input Off Voltage ＶＩ（ＯＦＦ）（Ｖ） DC forward current gain -Collector Current 1000 100 -100 -1.2 -1.6 -2 ISAHAYA ELECTRONICS CORPORATION RT3T55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type VCE=-5V -10 Collector Current ＩＣ（ｍ Ａ） -100 ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...