... PRELIMINARY DESCRIPTION RT3T22M is a composite transistor built with RT1N241 chip and RT1P241 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ※PNP built in transistor of ”−”sign is abbreviation. ...
... C V =5V,I =100μ =6V,I =-10mA CE E (Tr1) DC forward gain -collector current 1000 VCE=5V 100 10 1 100 collector current IC (m A) 1.6 2.0 RT3T22M CompositeTransistor With Resistor For Switching Application Silicon Epitaxial Type Limits Min Typ Max 0 0.1 0.3 - 1.8 3.0 0.8 1 ...
TYPICAL CHARACTERISTICS Input on voltage-collector current -10 VCE=-0.2V -1 -0.1 -1 -10 colector curent IC (m A) collector current - Input on voltage -1000 VCE=-5V -100 -10 -0 -0.4 -0.8 -1.2 Input off voltage VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION (Tr2) DC forward gain ...
Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...