RT3TSSM ISAHAYA ELECTRONICS CORPORRATION, RT3TSSM Datasheet
RT3TSSM
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RT3TSSM Summary of contents
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... PRELIMINARY DESCRIPTION RT3TSSM is a composite transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ※PNP built in transistor of ”－”sign is abbreviation. ...
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... =6V,I =10mA CE E 1000 V 100 10 1 100 （ｍ Ａ） Ｃ 1.2 1.6 2 （Ｖ） Ｉ（ＯＦ Ｆ ） RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type Limits Min Typ 100 - - 0.1 - 100 Tr1 - 200 Tr2 - ...
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TYPICAL CHARACTERISTICS （Tr2） DC forward current gain-Collector current 1000 VCE=-5V 100 10 -1 -10 Collector current IC[mA] Input on voltage-Collector current -10 VCE=-200mV -1 -0.1 -0.1 -1 Collector current IC[mA] -1000 VCE=-5V -100 -10 -100 -0 -10 -100 ISAHAYA ELECTRONICS ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...