NP109N04PUJ Renesas Electronics Corporation., NP109N04PUJ Datasheet

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NP109N04PUJ

Manufacturer Part Number
NP109N04PUJ
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D19728EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode.)
• Super low on-state resistance
• Low input capacitance
• Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
DESCRIPTION
FEATURES
C
The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
R
NP109N04PUJ-E1B-AY
NP109N04PUJ-E2B-AY
iss
DS(on)
= 6900 pF TYP.
2. Starting T
3. T
PART NUMBER
= 2.3 mΩ MAX. (V
ch
≤ 150°C, R
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note
Note
G
Note2
DS
= 25 Ω
C
A
GS
GS
= 25°C)
= 25°C)
= 0 V)
Note3
= 0 V)
Note3
= 10 V, I
DD
LEAD PLATING
Pure Sn (Tin)
= 20 V, R
N-CHANNEL POWER MOS FET
D
= 55 A)
A
V
V
I
I
P
P
T
T
E
I
E
D(DC)
D(pulse)
AR
G
R
R
ch
stg
DSS
GSS
T1
T2
AS
AR
= 25°C)
= 25 Ω, V
th(ch-C)
th(ch-A)
DATA SHEET
SWITCHING
−55 to +175
GS
Tape 1000 p/reel
= 20 → 0 V, L = 100
±110
±440
0.68
83.3
±20
220
175
360
360
1.8
40
60
PACKING
MOS FIELD EFFECT TRANSISTOR
°C/W
°C/W
mJ
mJ
°C
°C
W
W
V
V
A
A
A
NP109N04PUJ
μ
H
TO-263 (MP-25ZP) typ. 1.5 g
PACKAGE
(TO-263)
2009

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NP109N04PUJ Summary of contents

Page 1

... DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING Note NP109N04PUJ-E1B-AY Pure Sn (Tin) Note NP109N04PUJ-E2B-AY Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance R = 2.3 mΩ ...

Page 2

... I = 110 μ di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ ≤ Duty Cycle 1% Data Sheet D19728EJ1V0DS NP109N04PUJ MIN. TYP. MAX. UNIT μ ±100 nA 2.0 3.0 4 102 S 1.7 2.3 mΩ 6900 10350 pF 930 1400 pF 360 ...

Page 3

... TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH R th(ch-A) R th(ch- 100 Pulse Width - s Data Sheet D19728EJ1V0DS NP109N04PUJ TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 125 150 175 T - Case Temperature - ° 83.3°C/W = 0.68°C/W Single Pulse 100 1000 3 ...

Page 4

... 250 μ 150 200 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 Data Sheet D19728EJ1V0DS NP109N04PUJ = −55°C A 25°C 85°C 150°C 175° Pulsed Gate to Source Voltage - V GS 25°C 85°C 150° ...

Page 5

... Q - Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = 100 A/μ 0 Diode Forward Current - A F Data Sheet D19728EJ1V0DS NP109N04PUJ C iss C oss C rss 1 10 100 110 A ...

Page 6

... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D19728EJ1V0DS NP109N04PUJ ...

Page 7

... Draw-out side MARKING INFORMATION UJ RECOMMENDED SOLDERING CONDITIONS The NP109N04PUJ should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP109N04PUJ Not all M8E 02. 11-1 ...

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