NP109N055PUJ Renesas Electronics Corporation., NP109N055PUJ Datasheet - Page 4

• Manufacturer Part Number: NP109N055PUJ
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

4
500
400
300
200
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
6
5
4
3
2
1
0
4
3
2
1
0
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-100
0
1
V
Pulsed
GS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 10 V
V
-50
T
DS
ch
0.4
- Drain to Source Voltage - V
- Channel Temperature - °C
I
D
10
- Drain Current - A
0
0.8
50
100
100
V
Pulsed
1.2
V
I
D
GS
DS
= 250 μA
= 10 V
150
= V
GS
Data Sheet D19729EJ1V0DS
1000
200
1.6
0.001
1000
1000
0.01
100
100
0.1
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
1
6
5
4
3
2
1
0
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
0
1
T
A
T
A
= −55°C
V
= −55°C
V
GS
25°C
85°C
GS
150°C
175°C
5
25°C
85°C
- Gate to Source Voltage - V
- Gate to Source Voltage - V
2
I
D
10
- Drain Current - A
10
150°C
175°C
3
NP109N055PUJ
15
100
V
Pulsed
4
V
Pulsed
I
Pulsed
DS
D
20
DS
= 55 A
= 10 V
= 5 V
1000
25
5