NP109N055PUJ Renesas Electronics Corporation., NP109N055PUJ Datasheet - Page 5

• Manufacturer Part Number: NP109N055PUJ
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

1000
1000
100
100
0.1
10
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
1
6
5
4
3
2
1
0
-100
0.1
0
V
V
R
DD
GS
G
V
V
SWITCHING CHARACTERISTICS
= 0 Ω
GS
= 28 V
= 10 V
-50
F(S-D)
T
= 10 V
ch
- Channel Temperature - ° C
1
- Source to Drain Voltage - V
I
D
0.5
- Drain Current - A
0
10
50
0 V
100
1
100
V
I
Pulsed
D
GS
= 55 A
t
t
t
t
150
d(off)
d(on)
r
f
Pulsed
= 10 V
1000
200
1.5
Data Sheet D19729EJ1V0DS
100000
1000
10000
100
1000
60
50
40
30
20
10
10
100
0
1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0.1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
di/dt = 100 A/μs
V
0.1
GS
V
f = 1 MHz
20
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
= 0 V
GS
I
F
= 0 V
V
- Diode Forward Current - A
1
DS
V
Q
40
DD
G
- Drain to Source Voltage - V
- Gate Charge - nC
V
= 44 V
DS
28 V
11 V
1
60
10
80
V
NP109N055PUJ
GS
100
C
C
C
100
10
iss
oss
rss
I
D
= 110 A
120
1000
140
100
12
10
8
6
4
2
0
5