MT4S104U TOSHIBA Semiconductor CORPORATION, MT4S104U Datasheet

no-image

MT4S104U

Manufacturer Part Number
MT4S104U
Description
Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT4S104U
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
UHF-SHF Low Noise Amplifier Application
FEATURES
Marking
Absolute Maximum Ratings
Low Noise Figure :NF=1.25dB (@f=5.2GHz)
High Gain:|S21e|
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
Characteristics
4
1
P 1
2
=10.0dB (@f=5.2GHz)
3
2
(Ta = 25°C)
Symbol
MT4S104U
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
−55~150
Rating
150
1.2
10
30
6
3
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.006 g
JEDEC
JEITA
TOSHIBA
USQ
1.
2.
3.
4.
COLLECTOR
EMITTER
BASE
EMITTER
1.25±0.1
2.1±0.1
2-2K1E
MT4S104U
2007-11-01
Unit:mm

Related parts for MT4S104U

MT4S104U Summary of contents

Page 1

... Symbol Rating Unit CBO CEO V 1.2 V EBO 150 ° −55~150 °C stg 1 MT4S104U Unit:mm 2.1±0.1 1.25±0.1 1. COLLECTOR 2. EMITTER BASE 3. EMITTER 4. USQ ⎯ JEDEC ⎯ JEITA TOSHIBA 2-2K1E Weight: 0.006 g 2007-11-01 ...

Page 2

... CBO =1V EBO EB C hFE V =2V, I =7mA =2V, I =0, f=1MHz =2V, I =0, f=1MHz (Note MT4S104U Min Typ. Max Unit ⎯ GHz ⎯ 14.0 16.5 dB ⎯ ⎯ 10.0 dB ⎯ 0.67 0.95 dB ⎯ ⎯ 1.25 dB Min Typ. Max Unit ⎯ ⎯ ...

Page 3

... 0.8 1.0 ( f=2GHz Ta=25° 100 3 MT4S104U COMMON EMITTER VCE=2V Ta=25° 100 Collector-current I (mA 21e C VCE=2V 1V f=1GHz Ta=25°C 10 100 Collector-current I (mA 21e ...

Page 4

... NF 5.2GHz 1.0 NF 2GHz 0.5 VCE=2V Ta=25°C 0 Collector-current I (mA) C 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 0.1 Collector-Base voltage V 20 100 100 Ambient temperature T 4 MT4S104U IE=0,f=1MHz,Ta=25°C Cob Cre 100 125 150 175 ( ° 2007-11-01 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 MT4S104U 20070701-EN GENERAL 2007-11-01 ...

Related keywords