IS62C51216AL Integrated Silicon Solution, Inc., IS62C51216AL Datasheet

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IS62C51216AL

Manufacturer Part Number
IS62C51216AL
Description
512k X 16 Low Voltage, Ultra Low Power Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62C51216AL-55TLI
Manufacturer:
ISSI
Quantity:
20 000
IS62C51216AL
IS65C51216AL
512K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
• TTL compatible interface levels
• Single power supply
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature (-40
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. 00A
02/01/08
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
– 4.5V--5.5V V
required
dd
Lower Byte
Upper Byte
o
I/O8-I/O15
C to +125
I/O0-I/O7
A0-A18
V
GND
DD
CS2
CS1
WE
OE
UB
LB
o
C)
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
speed, 8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs.The active LOWWrite Enable (WE)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62C51216AL and IS65C51216AL are packaged in
the JEDEC standard 48-pin mini BGA (9mm x 11mm) and
44-Pin TSOP (TYPE II).
ISSI
MEMORY ARRAY
IS62C51216AL and IS65C51216AL are high-
COLUMN I/O
512K x 16
ISSI
ADVANCED INFORMATION
's high-performance CMOS
FEBRUARY 2008
1

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IS62C51216AL Summary of contents

Page 1

... Easy memory expansion is provided by using Chip Enable and Output Enable inputs.The active LOWWrite Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62C51216AL and IS65C51216AL are packaged +125 C) o the JEDEC standard 48-pin mini BGA (9mm x 11mm) and 44-Pin TSOP (TYPE II) ...

Page 2

... IS62C51216AL, IS65C51216AL PIN CONFIGURATIONS 48-Pin mini BGA (9mmx11mm I/O UB CS1 8 C I/O I GND A17 A7 I/O I I/O NC A16 I I/O I/O A14 A15 I A12 I/O NC A13 15 H A18 A9 A10 A8 44-Pin TSOP (Type II CS1 ...

Page 3

... IS62C51216AL, IS65C51216AL TRUTH TABLE Mode WE CS1 Not Selected Output Disabled Read Write OPERATING RANGE ( Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C ...

Page 4

... IS62C51216AL, IS65C51216AL ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND term t Storage Temperature stg P Power Dissipation Output Current (LOW) out Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 5

... IS62C51216AL, IS65C51216AL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load AC TEST LOADS 480 Ω 5V OUTPUT 255 Ω Including jig and scope Figure 1 Integrated Silicon Solution, Inc. — www.issi.com — ...

Page 6

... IS62C51216AL, IS65C51216AL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I out Average operating Current I/o I TTL Standby Current (TTL Inputs CMOS Standby Current (CMOS Inputs) CE ≥ V ≥ ...

Page 7

... IS62C51216AL, IS65C51216AL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time rc t Address Access Time aa t Output Hold Time oHa t t CS1/CS2 Access Time acs1/ acs2 t OE Access Time doe t ( High-Z Output Hzoe Low-Z Output (2) Lzoe t t CS1/CS2 to High-Z Output ...

Page 8

... IS62C51216AL, IS65C51216AL AC WAVEFORMS READ CYCLE NO. 2 (1,3) (CS1, CS2, OE, AND UB/LB Controlled) ADDRESS OE CS1 s CS2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1, UB Address is valid prior to or coincident with CS1 LOW transition DOE ...

Page 9

... IS62C51216AL, IS65C51216AL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time CS1/CS2 to Write End scs1/ scs2 t Address Setup Time to Write End aw t Address Hold from Write End Ha t Address Setup Time sa t LB, UB Valid to End of Write Pwb t WE Pulse Width ...

Page 10

... IS62C51216AL, IS65C51216AL WRITE CYCLE NO. 2 (WE Controlled HIGH During Write Cycle) ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN WRITE CYCLE NO. 3 (WE Controlled LOW During Write Cycle) ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN SCS1 t SCS2 PWE HZWE HIGH-Z ...

Page 11

... IS62C51216AL, IS65C51216AL WRITE CYCLE NO. 4 (UB/LB Controlled) ADDRESS OE LOW CS1 HIGH CS2 WE UB HZWE D OUT DATA UNDEFINED D IN Integrated Silicon Solution, Inc. — www.issi.com — Rev. 00A 02/01/ ADDRESS 1 ADDRESS PBW WORD 1 HIGH DATA ...

Page 12

... IS62C51216AL, IS65C51216AL DATA RETENTION SWITCHING CHARACTERISTICS (4.5V - 5.5V) Symbol Parameter V V for Data Retention Data Retention Current dr t Data Retention Setup Time sdr t Recovery Time rdr DATA RETENTION WAVEFORM V DD 1.65V 1. CS1 GND DATA RETENTION WAVEFORM V DD 3.0 CE2 2. 0.4V GND 12 Test Condition See Data Retention Waveform = 2.0V, CS1 ≥ ...

Page 13

... IS62C51216AL, IS65C51216AL IS62C51216AL (4.5V - 5.5V) Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 45 IS62C51216AL-45TLI IS62C51216AL-45MLI IS65C51216AL (4.5V - 5.5V) Industrial Range: –40°C to +125°C Speed (ns) Order Part No. 55 IS65C51216AL-55CTLA3 IS65C51216AL-55MLA3 Integrated Silicon Solution, Inc. — www.issi.com — Rev. 00A 02/01/08 Package TSOP-II, Lead-free mini BGA, Lead-free (9mmx11mm) ...

Page 14

... SEATING PLANE Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 15

... Leads — 0.047 A — — 0.012 A1 0.24 — — A2 0.60 D 10.90 11.00 11. 8.90 9.00 9. 0.30 0.35 0.40 Integrated Silicon Solution, Inc. — www.issi.com — INCHES Min. Typ. Max. 48 — 1.20 — — 0.047 — 0.30 0.009 — 0.012 — — 0.024 — — 0.429 0.433 0.437 5.25BSC 0.207BSC 0.350 0.354 0.358 3 ...

Page 16

... Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

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