APTGF50X120E3G Microsemi Corporation, APTGF50X120E3G Datasheet

APTGF50X120E3G

Manufacturer Part Number

APTGF50X120E3G

Description

3 Phase Bridge - Igbt 3 Phase Bridge V Ces = 1200v I C = 50a @ Tc = 80? Npt Igbt Power Module

Manufacturer

Microsemi Corporation

Datasheet

1.APTGF50X120E3G.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APTGF50X120E3G

Manufacturer:

APT

Quantity:

1 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

APTGF50X120E3G

Quantity:

Current page: 1 of 3
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Absolute maximum ratings

SCSOA

Symbol

NPT IGBT Power Module

CES

Collector - Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

Short Circuit Save Operating Area

1 2

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

3 Phase bridge

3 4

Parameter

5 6

APT website – http://www.advancedpower.com

= 125°C

= 25°C

= 80°C

= 25°C

Application

Features

Benefits

•

500A@1200V

Max ratings

AC Motor control

Non Punch Through (NPT) IGBT

Kelvin emitter for easy drive

Very low stray inductance

High level of integration

Stable temperature behavior

Very rugged

Solderable terminals for easy PCB mounting

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

1200

150

400

APTGF50X120E3

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

CES

= 50A @ Tc = 80°C

= 1200V

Unit

1 - 3

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APTGF50X120E3G Summary of contents

Page 1

Phase bridge NPT IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current ...

Electrical Characteristics Symbol Characteristic BV Collector - Emitter Breakdown Voltage CES I Zero Gate Voltage Collector Current CES V Collector Emitter on Voltage CE(on) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic ...

Page 3

Package outline ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 ...

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APTGF50X120E3G datasheet download

APTGF50X120E3G Microsemi Corporation, APTGF50X120E3G Datasheet

APTGF50X120E3G

Available stocks

Related parts for APTGF50X120E3G

APTGF50X120E3G Summary of contents

Page 1

Page 2

Page 3

Related keywords