APTGF50DSK120T3G Microsemi Corporation, APTGF50DSK120T3G Datasheet
APTGF50DSK120T3G
Related parts for APTGF50DSK120T3G
APTGF50DSK120T3G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50DSK120T3G Application • AC and DC motor control • Switched Mode Power Supplies Q2 Features 11 • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50DSK120T3G = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C ...
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... K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50DSK120T3G Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ...
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... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0. Junction Temperature (°C) J APTGF50DSK120T3G Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle 30 T =125° Collector to Emitter Voltage ( 50A T =25°C ...
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... T = 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF50DSK120T3G Turn-Off Delay Time vs Collector Current 400 V =15V =125°C 350 J 300 V =15V =25°C 250 600V 5Ω ...
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... CE Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTGF50DSK120T3G Reverse Bias Safe Operating Area 120 100 400 V , Collector to Emitter Voltage (V) CE Single Pulse 0.01 0.1 Operating Frequency vs Collector Current 120 100 80 ZVS ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50DSK120T3G Single Pulse 0.001 ...