APTGF50A120T3WG Microsemi Corporation, APTGF50A120T3WG Datasheet

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APTGF50A120T3WG

Manufacturer Part Number
APTGF50A120T3WG
Description
Phase Leg Npt Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
RBSOA
Symbol
V
V
I
NPT IGBT Power Module
P
I
CM
CES
GE
C
D
Pins 25/26/27/28 must be shorted together
Pins 13/14/15/16 must be shorted together
Pins 18/19/20/22 must be shorted together
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
8
7
4
3
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
18
25
3
Phase leg
25
4
19
26
Parameter
23 22
27
20
7
28
22
8
13
14
15
16
20
10
19
31
32
18
11 12
NTC
16
15
14
13
www.microsemi.com
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
APTGF50A120T3WG
100A @ 1200V
Max ratings
Welding converters
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive T
RoHS compliant
1200
-
-
-
-
-
-
-
-
150
±20
312
70
50
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Symmetrical design
V
I
C
CES
= 50A @ Tc = 80°C
performance
= 1200V
Unit
W
A
V
V
at
C
high
of V
CEsat
frequency
1 - 7

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APTGF50A120T3WG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50A120T3WG 31 Application • Welding converters Features • Non Punch Through (NPT) Fast IGBT - ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50A120T3WG = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C ...

Page 3

... K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50A120T3WG Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ...

Page 4

... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0. Junction Temperature (°C) J APTGF50A120T3WG Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle 30 T =125° Collector to Emitter Voltage ( 50A T =25°C ...

Page 5

... T = 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF50A120T3WG Turn-Off Delay Time vs Collector Current 400 V =15V =125°C 350 J 300 V =15V =25°C 250 600V 5Ω ...

Page 6

... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF50A120T3WG Reverse Bias Safe Operating Area 120 100 400 V , Collector to Emitter Voltage (V) CE Single Pulse 0.01 0.1 Operating Frequency vs Collector Current 120 100 80 ...

Page 7

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50A120T3WG Single Pulse 0.001 ...

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