APTGF90VDA60T3G Microsemi Corporation, APTGF90VDA60T3G Datasheet

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APTGF90VDA60T3G

Manufacturer Part Number
APTGF90VDA60T3G
Description
Dual Boost Chopper Npt Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
RBSOA
Symbol
V
V
NPT IGBT Power Module
I
All multiple inputs and outputs must be shorted together
P
I
CM
CES
C
GE
D
Dual Boost chopper
26
27
15
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Example: 13/14 ; 29/30 ; 22/23 …
2
3
19
22
29
25
4
20
23
30
13
23 22
NTC
7
14
8
Parameter
10
31
7
20
11
32
8
10
19
18
11 12
www.microsemi.com
16
15
14
13
4
3
16
Application
Features
Benefits
APTGF90VDA60T3G
T
T
T
T
T
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction (PFC)
Interleaved PFC
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability
RoHS compliant
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Symmetrical design
= 90A @ Tc = 80°C
= 600V
200A @ 600V
Max ratings
±20
600
110
200
416
90
Unit
W
V
A
V
1 - 5

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APTGF90VDA60T3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF90VDA60T3G V I Application • AC and DC motor control • Switched Mode Power Supplies • ...

Page 2

... V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90VDA60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 125°C ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF90VDA60T3G T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ...

Page 4

... Eon 100A ; Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGF90VDA60T3G =15V) GE 200 T J 175 =25°C J 150 125 T =125°C J 100 2.5 3 3.5 0 Energy losses vs Collector Current 300V 15V ...

Page 5

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF90VDA60T3G Forward Characteristic of diode 200 ...

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