STP22NE03L ST Microelectronics, Inc., STP22NE03L Datasheet
STP22NE03L
Available stocks
Related parts for STP22NE03L
STP22NE03L Summary of contents
Page 1
... N - CHANNEL ENHANCEMENT MODE R I DS(on) D < 0. " Parameter = 100 STP22NE03L " POWER MOSFET TO-220 INTERNAL SCHEMATIC DIAGRAM Value 0.4 6 -65 to 175 175 22 A, di/dt 300 (BR)DSS j Unit ...
Page 2
... STP22NE03L THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...
Page 3
... =4 Test Conditions di/dt = 100 150 STP22NE03L Min. Typ. Max. Unit 100 Min. Typ. Max. Unit Min ...
Page 4
... STP22NE03L DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. MAX. 0.173 0.181 0.048 0.051 0.094 0.107 0.050 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.203 ...
Page 5
... SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SGS-THOMSON Microelectronics GROUP OF COMPANIES . . . STP22NE03L 5/5 ...