STP32N06L ST Microelectronics, Inc., STP32N06L Datasheet

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STP32N06L

Manufacturer Part Number
STP32N06L
Description
Old PRODUCT: Not Suitable For Design-in
Manufacturer
ST Microelectronics, Inc.
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
STP32N06L
STP32N06LFI
Symbol
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
LOGIC LEVEL COMPATIBLE INPUT
175
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
DM
V
V
V
P
T
DGR
I
I
T
ISO
DS
GS
stg
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
V
60 V
60 V
= 0.045
DSS
< 0.055
< 0.055
Parameter
R
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
32 A
19 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
STP32N06L
TO-220
128
105
0.7
32
22
1
-65 to 175
2
Value
STP32N06LFI
3
175
60
60
15
STP32N06L
STP32N06LFI
ISOWATT220
2000
0.27
128
19
13
40
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

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STP32N06L Summary of contents

Page 1

... I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 STP32N06L STP32N06LFI TO-220 ISOWATT220 Value STP32N06L STP32N06LFI 128 128 105 40 0.7 0.27 2000 -65 to 175 175 Unit ...

Page 2

STP36N06L/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink t hc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter t Turn-on Time d(on) t Rise Time r (di/dt) Turn-on Current Slope on Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise ...

Page 4

STP36N06L/FI Thermal Impedance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP36N06L/FI 5/10 ...

Page 6

STP36N06L/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit ...

Page 8

STP36N06L/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL ...

Page 9

ISOWATT220 MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 Ø mm MAX. ...

Page 10

STP36N06L/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from ...

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