STP3N100 ST Microelectronics, Inc., STP3N100 Datasheet

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STP3N100

Manufacturer Part Number
STP3N100
Description
Old PRODUCT: Not Suitable For Design-in
Manufacturer
ST Microelectronics, Inc.
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
December 1996
STP3N100
STP3N100FI
Symbol
I
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INPUT CAPACITANCE
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
CONSUMER AND INDUSTRIAL LIGHTING
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
V
DM
V
V
V
P
T
DGR
I
I
T
ISO
DS
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
1000 V
1000 V
V
DSS
Parameter
R
< 5
< 5
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
3.5 A
2 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
TO-220
STP3N100
100
3.5
0.8
14
2
1
-65 to 150
2
Value
1000
1000
3
150
20
STP3N100FI
STP3N100FI
STP3N100
ISOWATT220
2000
0.32
1.2
14
40
2
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

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STP3N100 Summary of contents

Page 1

... D < 5 3.5 A < 100 STP3N100 STP3N100FI TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP3N100 STP3N100FI 1000 1000 100 40 0.8 0.32 2000 -65 to 150 150 Unit ...

Page 2

... STP3N100/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink t hc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current A R (repetitive or not-repetitive Single Pulse Avalanche Energy AS o (starting Repetitive Avalanche Energy ...

Page 3

... Test Conditions 3.5 A di/dt = 100 100 150 (see test circuit, figure 5) Safe Operating Areas For ISOWATT220 STP3N100/FI Min. Typ. Max. Unit 100 Min. Typ. ...

Page 4

... STP3N100/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP3N100/FI 5/10 ...

Page 6

... STP3N100/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit STP3N100/FI 7/10 ...

Page 8

... STP3N100/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. 0.173 0.048 0.094 0.050 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.511 0.104 0.600 0.244 0.137 0.147 ...

Page 9

... MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 STP3N100/FI inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 P011G 9/10 ...

Page 10

... STP3N100/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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