STP80NF12FP ST Microelectronics, Inc., STP80NF12FP Datasheet

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STP80NF12FP

Manufacturer Part Number
STP80NF12FP
Description
N-channel 120V-0.013OHM-80A TO-220/TO-247/TO-220FP/D2PAK StripFET ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
(*) Limited by Package
(2) I
March 2003
STB80NF12
STP80NF12
STP80NF12FP
STW80NF12
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
Pulse width limited by safe operating area.
Symbol
SD
dv/dt
N-CHANNEL 120V-0.013 -80A TO-220/TO-247/TO-220FP/D²PAK
E
I
V
DM
V
V
V
I
P
AS (2)
T
D
DGR
I
T
ISO
GS
stg
DS
TYPE
D
35A, di/dt 300A/µs, V
(*)
tot
(
j
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
DS
(on) = 0.013
120 V
120 V
120 V
120 V
V
DSS
DD
V
Parameter
(BR)DSS
²
PAK (TO-263)
<0.018
<0.018
<0.018
<0.018
R
DS(on)
C
GS
, T
= 25°C
GS
j
= 20 k )
= 0)
T
JMAX.
C
C
80 A(*)
80 A(*)
80 A(*)
80 A(*)
= 25°C
= 100°C
I
D
STP80NF12 STP80NF12FP
STB80NF12 STW80NF12
STB_P_W80NF12
INTERNAL SCHEMATIC DIAGRAM
(#) Refer to SOA for the max allovable currente values on FP-type
due to thermal resistance value.
(1) Starting T
STripFET™ II POWER MOSFET
------
320
300
2.0
80
60
1
j
= 25
3
(Suffix “T4”)
-55 to 175
TO-220
1
TO-263
D
o
Value
C, I
2
± 20
²
120
120
700
PAK
10
3
D
= 40A, V
STP80NF12FP
320(#)
80(#)
60(#)
2500
DD
0.3
45
= 45V
TO-220FP
1
2
TO-247
W/°C
V/ns
Unit
3
mJ
°C
W
V
V
V
A
A
A
V
1/12

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STP80NF12FP Summary of contents

Page 1

... Storage Temperature stg T Operating Junction Temperature j ( Pulse width limited by safe operating area. (*) Limited by Package (2) I 35A, di/dt 300A/µ (BR)DSS March 2003 STB80NF12 STW80NF12 STP80NF12 STP80NF12FP STripFET™ II POWER MOSFET R I DS(on A(*) 80 A(*) 80 A(*) 80 A(*) INTERNAL SCHEMATIC DIAGRAM STB_P_W80NF12 = 25° ...

Page 2

... STB80NF12 STW80NF12 STP80NF12 STP80NF12FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( ...

Page 3

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Reverse Recovery Current I RRM (*) Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Test Conditions 4 (Resistive Load, Figure 3) ...

Page 4

... STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Thermal Impedance Output Characteristics Transconductance 4/12 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Capacitance Variations Normalized on Resistance vs Temperature Normalized Breakdown Voltage Temperature 5/12 ...

Page 6

... STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... DIM. MIN. TYP. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 8 1.27 L3 1 0° STB80NF12 STW80NF12 STP80NF12 STP80NF12FP ² D PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 5.28 0.192 15.85 0.591 1.4 0.050 1.75 0.055 3.2 0.094 0.4 8° inch. TYP. ...

Page 8

... STB80NF12 STW80NF12 STP80NF12 STP80NF12FP DIM. MIN. A 4.4 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4. 2.65 L6 15.25 L7 6.20 L9 3.50 DIA 3.75 8/12 TO-220 MECHANICAL DATA mm. TYP. MAX. 4.6 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.70 0.094 10.40 0.393 16.40 28.90 14 0.511 2.95 0.104 15.75 0.600 6.60 0.244 3.93 0.137 3.85 0.147 inch. MIN. TYP. 0.645 1 ...

Page 9

... TO-220FP MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ STB80NF12 STW80NF12 STP80NF12 STP80NF12FP mm MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. ...

Page 10

... STB80NF12 STW80NF12 STP80NF12 STP80NF12FP DIM. MIN. A 4.7 D 2 15.3 L 19 10/12 TO-247 MECHANICAL DATA mm TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 10.9 15.9 20.3 14.8 34.6 5.5 3 inch MIN. TYP. MAX. 0.185 0.209 0.087 0.102 0.016 0.031 0.039 0.055 0.079 0.094 0.118 0.134 0.429 0.602 0.626 0.776 0.779 0.559 ...

Page 11

... P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 P2 1.9 2.1 0075 R 50 1.574 T 0.25 0.35 .0.0098 W 23.7 24.3 0.933 * on sales type STB80NF12 STW80NF12 STP80NF12 STP80NF12FP TUBE SHIPMENT (no suffix)* inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 0.0137 0.956 REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A 330 B 1.5 0.059 C 12 ...

Page 12

... STB80NF12 STW80NF12 STP80NF12 STP80NF12FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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