MMBT3904M Jiangsu Changjiang Electronics Technology Co., Ltd., MMBT3904M Datasheet
MMBT3904M
Manufacturer Part Number
MMBT3904M
Description
TRANSISTOR
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.MMBT3904M.pdf
(3 pages)
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT3906M)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier, switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MAXIMUM RATINGS* T
ELECTRICAL CHARACTERISTICS (Tamb=25℃
MARKING:1N
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
MMBT3904M
V
V
V
I
P
T
T
C
B E
1N
J
stg
CBO
CEO
EBO
C
C
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
A
=25℃ unless otherwise noted
TRANSISTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
Symbol
V
V
V
V
V
V
V
Parameter
h
h
h
h
h
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
I
CEX
EBO
FE(1)
FE(2)
FE(3)
FE(4)
FE(5)
f
T
I
I
I
V
V
V
V
V
V
V
I
I
I
I
V
C
C
E
C
C
C
C
CE
EB
CE
CE
CE
CE
CE
CE
=10µA,I
=10µA,I
=1mA,I
=10mA,I
=50mA,I
=10mA,I
=50mA,I
=30V,V
=5V,I
=1V,I
=1V,I
=1V,I
=1V,I
=1V,I
=20V,I
unless otherwise specified)
Test
C
C
C
C
C
C
B
C
E
=0
=0.1mA
=1mA
=10mA
=50mA
=100mA
=0
C
B
B
B
B
=0
=0
EB(off)
=10mA,f=100MHz
=1mA
=5mA
=1mA
=5mA
=3V
conditions
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
-55-150
Value
0.15
150
0.2
60
40
6
0.65
MIN
100
300
60
40
40
70
60
30
6
BACK
TOP
TYP
B
E
C
C
MAX
0.05
0.85
0.95
300
0.1
0.2
0.3
Units
E
B
℃
℃
W
V
V
V
A
UNIT
MHz
µA
µA
V
V
V
V
V
V
V
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MMBT3904M Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors MMBT3904M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906M) Ultra-Small Surface Mount Package Also Available in Lead Free Version APPLICATION General Purpose Amplifier, switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc ...
Page 2
... Symbol Test conditions C V =5V,I =0,f=1MHz =5V,I =0.1mA =3V, V =-0.5V （ off ） I =10mA , I =1mA =3V, I =10mA 1mA MIN TYP MAX UNIT 200 MMBT3904M ...
Page 3
illim ...