STP30N05FI STMicroelectronics, STP30N05FI Datasheet

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STP30N05FI

Manufacturer Part Number
STP30N05FI
Description
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
December 1996
STP30N05
STP30N05FI
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
I
V
D M
V
V
V
T
P
DG R
I
I
T
ISO
D S
GS
stg
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
V
50 V
50 V
= 0.045
DSS
< 0.05
< 0.05
Parameter
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
30 A
19 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
TO-220
STP30N05
120
105
0.7
30
21
1
-65 to 175
2
Value
3
175
50
50
20
STP30N05FI
STP30N05FI
STP30N05
ISOWATT220
2000
0.27
120
19
13
40
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

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STP30N05FI Summary of contents

Page 1

... Parameter = 100 STP30N05 STP30N05FI TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP30N05 STP30N05FI 120 120 105 40 0.7 0.27 2000 -65 to 175 175 Unit ...

Page 2

STP30N05/FI THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter t Turn-on Time d(on) t Rise Time r (di/dt) Turn-on Current Slope on Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise ...

Page 4

STP30N05/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature STP30N05/FI Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/10 ...

Page 6

STP30N05/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time STP30N05/FI Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test ...

Page 8

STP30N05/FI TO-220 MECHANICAL DATA DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 9

ISOWATT220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø ...

Page 10

STP30N05/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results ...

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