STP3NA100 ST Microelectronics, STP3NA100 Datasheet

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STP3NA100

Manufacturer Part Number
STP3NA100
Description
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Manufacturer
ST Microelectronics
Datasheet

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0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
February 1998
STP3NA100
STP3NA100FI
Symbol
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
LOW INTRINSIC CAPACITANCES
DM
V
V
V
T
P
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
ISO
GS
stg
DS
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
1000 V
1000 V
V
= 4.3
DSS
R
< 5
<5
DS(on)
c
Parameter
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
FAST POWER MOS TRANSISTOR
c
c
3.5 A
2 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
TO-220
STP3NA100
0.88
110
3.5
2.0
14
1
STP3NA100FI
2
-65 to 150
3
Value
1000
1000
150
STP3NA100
30
STP3NA100FI
TO-220FI
2000
0.36
2.0
1.2
14
45
1
W/
Unit
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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STP3NA100 Summary of contents

Page 1

... DS(on) D <5 3.5 A < Parameter = 100 STP3NA100 STP3NA100FI TO-220 TO-220FI INTERNAL SCHEMATIC DIAGRAM Value STP3NA100 STP3NA100FI 1000 1000 30 3.5 2.0 2.0 1 110 45 0.88 0.36 2000 -65 to 150 150 Unit ...

Page 2

... STP3NA100/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...

Page 3

... GS (see test circuit, figure 5) Test Conditions 3.5 A di/dt = 100 100 150 (see circuit, figure 5) Safe Operating Area for TO-220FP STP3NA100/FI Min. Typ. Max. Unit Min. Typ. Max. Unit 62 85 ...

Page 4

... STP3NA100/FI Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP3NA100/FI 5/9 ...

Page 6

... STP3NA100/FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... MIN. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 STP3NA100/FI inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 L4 P011C 7/9 ...

Page 8

... STP3NA100/FI ISOWATT220 MECHANICAL DATA DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 mm TYP. MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. MAX. 0.181 0.106 ...

Page 9

... SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SGS-THOMSON Microelectronics GROUP OF COMPANIES . . . STP3NA100/FI 9/9 ...

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