STP3NA50 ST Microelectronics, STP3NA50 Datasheet

no-image

STP3NA50

Manufacturer Part Number
STP3NA50
Description
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Manufacturer
ST Microelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP3NA50
Manufacturer:
ST
Quantity:
15 000
Part Number:
STP3NA50
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP3NA50
Manufacturer:
ST
0
Part Number:
STP3NA50FI
Manufacturer:
ST
Quantity:
15 000
Part Number:
STP3NA50FI
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP3NA50FI
Manufacturer:
ST
0
Part Number:
STP3NA50FI������
Manufacturer:
ST
0
Part Number:
STP3NA50TP
Manufacturer:
ST
0
Part Number:
STP3NA50������
Manufacturer:
ST
0
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
ruggedness and superior switching performance.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
STP3NA50
STP3NA50FI
Symbol
I
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
V
DM
V
V
V
P
T
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
ISO
DS
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain-gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
DS(on)
500 V
500 V
V
and gate charge, unequalled
= 2.4
DSS
Parameter
R
< 3
< 3
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
FAST POWER MOS TRANSISTOR
3.3 A
2.3 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STP3NA50
TO-220
13.2
0.64
3.3
2.1
80
1
-65 to 150
2
Value
3
500
500
150
30
STP3NA50FI
STP3NA50FI
STP3NA50
ISOWATT220
2000
13.2
0.32
2.3
1.5
40
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

Related parts for STP3NA50

STP3NA50 Summary of contents

Page 1

... FAST POWER MOS TRANSISTOR I DS(on) D < 3 3.3 A < 100 STP3NA50 STP3NA50FI TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP3NA50 STP3NA50FI 500 500 30 3.3 2.3 2.1 1.5 13.2 13 0.64 0.32 2000 -65 to 150 150 Unit ...

Page 2

... STP3NA50/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink t hc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy AS o (starting ...

Page 3

... Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) Safe Operating Areas for ISOWATT220 STP3NA50/FI Min. Typ. Max. Unit 340 Min. Typ. ...

Page 4

... STP3NA50/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP3NA50/FI 5/10 ...

Page 6

... STP3NA50/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit STP3NA50/FI 7/10 ...

Page 8

... STP3NA50/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. 0.173 0.048 0.094 0.050 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.511 0.104 0.600 0.244 0.137 0.147 ...

Page 9

... MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 STP3NA50/FI inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 P011G 9/10 ...

Page 10

... STP3NA50/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

Related keywords