STP3NA90 ST Microelectronics, STP3NA90 Datasheet

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STP3NA90

Manufacturer Part Number
STP3NA90
Description
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Manufacturer
ST Microelectronics
Datasheet

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Part Number:
STP3NA90FI
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Part Number:
STP3NA90FI
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Part Number:
STP3NA90FI
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0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
March 1996
( )Pulse width limited by safe operating area
STP3NA90
STP3NA90FI
Symbol
I
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
V
DM
V
V
V
T
P
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
ISO
DS
GS
stg
D
D
tot
TYPE
( )
j
Drain-Source Voltage (V
Drain-Gate Voltage (R
Gate-Source Voltage
Drain-Current (continuous) at T
Drain-Current (continuous) at T
Drain-Current (Pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max Operating Junction Temperature
DS(on)
900 V
900 V
V
= 4.4
DSS
< 5.3
Parameter
R
DS(on)
5.3
c
gs
= 25
N - CHANNEL ENHANCEMENT MODE
gs
= 20 K )
= 0)
o
C
c
c
FAST POWER MOS TRANSISTOR
1.9 A
3 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STP3NA90
TO-220
1.25
100
12
3
2
-
-65 to 150
1
Value
2
900
900
150
3
30
STP3NA90FI
STP3NA90FI
STP3NA90
ISOWATT220
2000
PRELIMINARY DATA
0.32
1.9
1.2
12
40
1
W/
Unit
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/6

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STP3NA90 Summary of contents

Page 1

... DS(on 5.3 1 INTERNAL SCHEMATIC DIAGRAM = 100 STP3NA90 STP3NA90FI PRELIMINARY DATA TO-220 ISOWATT220 Value STP3NA90 STP3NA90FI 900 900 30 3 1 100 40 1.25 0.32 - 2000 -65 to 150 150 Unit ...

Page 2

... STP3NA90/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting Repetitive Avalanche Energy ...

Page 3

... Test Conditions V = 720 4 Test Conditions di/dt = 100 100 150 DD j STP3NA90/FI Min. Typ. Max 360 Min. Typ. Max Min. Typ. Max 1.6 ...

Page 4

... STP3NA90/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 4/6 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. MAX. 0.173 0.181 0.048 0.051 0.094 0.107 0.050 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.203 ...

Page 5

... MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 STP3NA90/FI inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 P011G 5/6 ...

Page 6

... STP3NA90/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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