STP3NC70ZFP ST Microelectronics, STP3NC70ZFP Datasheet

no-image

STP3NC70ZFP

Manufacturer Part Number
STP3NC70ZFP
Description
N-CHANNEL MOSFET
Manufacturer
ST Microelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP3NC70ZFP
Manufacturer:
ST
Quantity:
25 000
Part Number:
STP3NC70ZFP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP3NC70ZFP
Manufacturer:
ST
0
www.DataSheet4U.com
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
June 2001
STP3NC70Z
STP3NC70ZFP
V
TYPICAL R
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
Symbol
dv/dt (1)
ESD(G-S)
I
V
DM
P
V
V
V
T
I
DGR
I
I
TOT
GS
T
ISO
DS
GS
stg
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate-source Current (DC)
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
www.DataSheet4U.com
(on) = 4.1
N-CHANNEL 700V - 4.1 - 2.5A TO-220/TO-220FP
V
700V
700V
DSS
R
< 4.7
< 4.7
DS(on)
C
Parameter
Zener-Protected PowerMESH™III MOSFET
GS
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
2.5 A
2.5 A
I
D
(1) I
(*) Limited by Maximum Temperature allowed
SD
2.5A, di/dt 100A/µs, V
TO-220
STP3NC70Z
0.52
2.5
1.6
10
65
-
STP3NC70ZFP
–65 to 150
Value
± 25
700
700
±50
150
1.5
3
STP3NC70Z
STP3NC70ZFP
DD
V
2.5 (*)
1.6 (*)
2500
0.28
(BR)DSS
TO-220FP
10
35
, T
j
www.
T
JMAX
1
W/°C
Unit
V/ns
mA
2
KV
°C
°C
W
DataSheet
DataSheet4U
V
V
V
A
A
A
V
DataSheet
DataSheet
1/10
3
4U
4U
4U
.com

Related parts for STP3NC70ZFP

STP3NC70ZFP Summary of contents

Page 1

... R I DSS DS(on) D < 4.7 2.5 A < 4.7 2.5 A Parameter = 25° 100° 25°C C (1) I (*) Limited by Maximum Temperature allowed STP3NC70Z STP3NC70ZFP TO-220 TO-220FP Value STP3NC70Z STP3NC70ZFP 700 700 ± 25 2.5 2.5 (*) 1.6 1.6 (*) 0.52 0.28 ±50 1 2500 –65 to 150 150 2.5A, di/dt 100A/µ (BR)DSS j www ...

Page 2

... STP3NC70Z/STP3NC70ZFP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting T ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... A, di/dt = 100A/µ 27V 150° (see test circuit, Figure 5) Parameter Test Conditions Igs=± 1mA (Open Drain) T=25°C Note( mA (25°) GSO STP3NC70Z/STP3NC70ZFP Min. Typ. Max. Unit Min. Typ. Max. Unit ...

Page 4

... STP3NC70Z/STP3NC70ZFP Safe Operating Area for TO-220 Thermal Impedance for TO-220 www.DataSheet4U.com Output Characteristics 4/10 Safe Operating Area for TO-220FP Thermal Impedance for TO-220FP Transfer Characteristics DataSheet DataSheet4U DataSheet DataSheet www. .com ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage www.DataSheet4U.com Normalized Gate Threshold Voltage vs Temp. STP3NC70Z/STP3NC70ZFP Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/10 DataSheet4U DataSheet DataSheet DataSheet www. .com ...

Page 6

... STP3NC70Z/STP3NC70ZFP Source-drain Diode Forward Characteristics www.DataSheet4U.com 6/10 DataSheet DataSheet4U DataSheet DataSheet www. .com ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load www.DataSheet4U.com Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP3NC70Z/STP3NC70ZFP Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/10 DataSheet4U DataSheet DataSheet DataSheet ...

Page 8

... STP3NC70Z/STP3NC70ZFP DIM DIA. www.DataSheet4U.com 8/10 TO-220 MECHANICAL DATA mm MIN. TYP. MAX. 4.40 4.60 1.23 1.32 2.40 2.72 1.27 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.4 2.7 10.0 10.40 16.4 13.0 14.0 2.65 2.95 15.25 15.75 6.2 6.6 3.5 3.93 3.75 3.85 L2 Dia inch MIN. TYP. MAX. 0.173 0.181 0.048 0.051 0.094 0.107 0.050 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 ...

Page 9

... STP3NC70Z/STP3NC70ZFP inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.204 0.094 0.106 0.393 0.409 0.630 1.126 1.204 .0385 0.417 0.114 0.141 0.626 0.645 0.354 0.366 ...

Page 10

... STP3NC70Z/STP3NC70ZFP www.DataSheet4U.com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

Related keywords