STP3NC90ZFP ST Microelectronics, STP3NC90ZFP Datasheet

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STP3NC90ZFP

Manufacturer Part Number
STP3NC90ZFP
Description
N-CHANNEL MOSFET
Manufacturer
ST Microelectronics
Datasheet
1.STP3NC90ZFP.pdf (11 pages)

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
STP3NC90ZFP
Manufacturer:
ST
Quantity:
15 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
STP3NC90ZFP
Manufacturer:
ST
Quantity:
12 500
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
STP3NC90ZFP
Manufacturer:
ST
0
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DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
January 2001
STP3NC90Z/FP
STB3NC90Z-1
V
TYPICAL R
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
Symbol
ESD(G-S)
I
V
DM
P
dv/dt
V
V
V
T
I
DGR
I
I
TOT
GS
T
ISO
DS
GS
stg
D
D
TYPE
j
( )
N-CHANNEL 900V - 3.2 - 3.5A TO-220/TO-220FP/I2PAK
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate-source Current (*)
Gate source ESD(HBM-C=100pF, R=15K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
www.DataSheet4U.com
(on) = 3.2
V
900V
900V
DSS
R
< 3.5
< 3.5
DS(on)
C
Zener-Protected PowerMESH™III MOSFET
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
3.5 A
3.5 A
STP3NC90Z - STP3NC90ZFP
I
D
(1)I
(*)
TO-220
.
Limited only by maximum temperature allowed
SD
3.5A, di/dt 100A/µs, V
STP(B)3NC90Z(-1)
100
3.5
2.2
0.8
14
--
(Tabless TO-220)
STB3NC90Z-1
–65 to 150
I2PAK
Value
± 25
900
900
±50
150
2.5
DD
3
1 2
STP3NC90ZFP
V
(BR)DSS
3
3.5(*)
2.2(*)
2000
0.28
14
35
, T
TO-220FP
j
www.
T
JMAX
W/°C
DataSheet
DataSheet4U
DataSheet
DataSheet
Unit
V/ns
1
mA
1/11
KV
°C
°C
W
V
V
V
A
A
A
V
2
3
4U
4U
4U
.com

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STP3NC90ZFP Summary of contents

Page 1

... Gate source ESD(HBM-C=100pF, R=15K ESD(G-S) dv/dt Peak Diode Recovery voltage slope V Insulation Withstand Voltage (DC) ISO T Storage Temperature stg T Max. Operating Junction Temperature j (•)Pulse width limited by safe operating area January 2001 STP3NC90Z - STP3NC90ZFP Zener-Protected PowerMESH™III MOSFET R I DSS DS(on) D < 3.5 3.5 A < 3.5 3.5 A Parameter = 25° ...

Page 2

STP3NC90Z/FP/STB3NC90Z-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol t Turn-on Delay Time d(on Rise Time Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol t Off-voltage Rise Time r(Voff) t Fall Time ...

Page 4

STP3NC90Z/FP/STB3NC90Z-1 Safe Operating Area For TO-220 / I²PAK Thermal Impedance For TO-220 / I²PAK www.DataSheet4U.com Output Characteristics 4/11 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Transfer Characteristics DataSheet DataSheet4U DataSheet DataSheet www. .com ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage www.DataSheet4U.com Normalized Gate Threshold Voltage vs Temp. STP3NC90Z/FP/STB3NC90Z-1 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/11 DataSheet4U DataSheet DataSheet DataSheet www. .com ...

Page 6

STP3NC90Z/FP/STB3NC90Z-1 Source-drain Diode Forward Characteristics www.DataSheet4U.com 6/11 DataSheet DataSheet4U DataSheet DataSheet www. .com ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load www.DataSheet4U.com Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP3NC90Z/FP/STB3NC90Z-1 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge ...

Page 8

STP3NC90Z/FP/STB3NC90Z-1 DIM DIA. www.DataSheet4U.com 8/11 TO-220 MECHANICAL DATA mm MIN. TYP. MAX. 4.40 4.60 1.23 1.32 2.40 2.72 1.27 0.49 0.70 0.61 ...

Page 9

DIM Ø www.DataSheet4U.com TO-220FP MECHANICAL DATA mm MIN. TYP. MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.15 1.7 1.15 1.7 ...

Page 10

STP3NC90Z/FP/STB3NC90Z-1 DIM www.DataSheet4U.com 10/11 2 TO-262 (I PAK) MECHANICAL DATA mm MIN. TYP. MAX. 4.4 4.6 2.49 2.69 0.7 0.93 1.14 1.7 0.45 0.6 1.23 1.36 8.95 ...

Page 11

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from ...

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