2010DN Fairchild Semiconductor, 2010DN Datasheet
2010DN
Related parts for 2010DN
2010DN Summary of contents
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... JC Electrical Characteristics Symbol V Maximum Instantaneous Forward Voltage * FM I Maximum Instantaneous Reverse Current * RM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation FYP2010DN TO-220 =25 C unless otherwise noted C Parameter @ T = 120 C C 60Hz Single Half-Sine Wave Parameter (per diode) Parameter ...
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... Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode Case Temperature, T Figure 5. Forward Current Derating Curve ©2002 Fairchild Semiconductor Corporation o =125 = = 1.0 1 ...
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... Package Dimensions ©2002 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.27 1.52 0.10 0.10 0.80 0.10 2.54TYP 2.54TYP [2.54 ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, September 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST CoolFET™ FASTr™ ...