HGTP10N50F1D Intersil Corporation, HGTP10N50F1D Datasheet

HGTP10N50F1D

Manufacturer Part Number

HGTP10N50F1D

Description

10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Manufacturer

Intersil Corporation

Datasheet

1.HGTP10N50F1D.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HGTP10N50F1D

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 5
Download datasheet (35Kb)

April 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 10A, 400V and 500V

• Latch Free Operation

• Typical Fall Time < 1.4 s

• High Input Impedance

• Low Conduction Loss

• Anti-Parallel Diode

• t

Description

The IGBT is a MOS gated high voltage switching device combin-

ing the best features of MOSFETs and bipolar transistors. The

device has the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much lower

on-state voltage drop varies only moderately between +25

and +150

ultrafast (t

IGBTs are ideal for many high voltage switching applications

operating at frequencies where low conduction losses are

essential, such as: AC and DC motor controls, power

supplies and drivers for solenoids, relays and contactors.

NOTE: When ordering, use the entire part number

Absolute Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector-Gate Voltage R

Collector Current Continuous at T

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Diode Forward Current at T

Power Dissipation Total at T

Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTE:

1. T

HGTP10N40F1D

HGTP10N50F1D

PART NUMBER

4,364,073

4,587,713

4,641,162

4,794,432

4,860,080

4,969,027

< 60ns

= +150

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

C. The diode used in parallel with the IGBT is an

< 60ns) with soft recovery characteristic.

C, Min. R

PACKAGING AVAILABILITY

4,417,385

4,598,461

4,644,637

4,801,986

4,883,767

TO-220AB

at T

PACKAGE

= 25 without latch.

= 1M

= +25

= +90

= +25

at T

> +25

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

= +25

= +90

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4,430,792

4,605,948

4,682,195

4,803,533

4,888,627

= +25

C . . . . . . . . . . . . . . . . . . . . . . . . . I

10N40F1D

10N50F1D

Intersil Corporation 1999

C, Unless Otherwise Speciﬁed

BRAND

4,443,931

4,618,872

4,684,413

4,809,045

4,890,143

3-25

Package

Terminal Diagram

10A, 400V and 500V N-Channel IGBTs

4,466,176

4,620,211

4,694,313

4,809,047

4,901,127

, T

HGTP10N40F1D,

CGR

CES

GES

STG

HGTP10N50F1D

C25

C90

F25

F90

with Anti-Parallel Ultrafast Diodes

COLLECTOR

(FLANGE)

HGTP10N40F1D

N-CHANNEL ENHANCEMENT MODE

-55 to +150

4,516,143

4,631,564

4,717,679

4,810,665

4,904,609

400

260

0.6

JEDEC TO-220AB

4,532,534

4,639,754

4,743,952

4,823,176

4,933,740

EMITTER

HGTP10N50F1D

-55 to +150

500

260

0.6

File Number

COLLECTOR

GATE

4,567,641

4,639,762

4,783,690

4,837,606

4,963,951

UNITS

2751.2

Related parts for HGTP10N50F1D

HGTP10N50F1D Summary of contents

Page 1

... L 4,443,931 4,466,176 4,618,872 4,620,211 4,684,413 4,694,313 4,809,045 4,809,047 4,890,143 4,901,127 © Intersil Corporation 1999 3-25 JEDEC TO-220AB EMITTER COLLECTOR GATE N-CHANNEL ENHANCEMENT MODE HGTP10N40F1D HGTP10N50F1D 400 500 400 500 0.6 0.6 -55 to +150 -55 to +150 260 ...

Page 2

... Speciﬁcations HGTP10N40F1D, HGTP10N50F1D Electrical Speciﬁcations T = +25 C PARAMETERS SYMBOL Collector-Emitter Breakdown BV Voltage Gate Threshold Voltage V GE(TH) Zero Gate Voltage Collector I CES Current Gate-Emitter Leakage Current I GES Collector-Emitter On-Voltage V CE(ON) Gate-Emitter Plateau Voltage V On-State Gate Charge Q G(ON) Turn-On Delay Time t D(ON) Rise Time Turn-Off Delay Time ...

Page 3

... HGTP10N40F1D, HGTP10N50F1D Typical Performance Curves +150 10V 15V COLLECTOR-EMITTER CURRENT (A) CE FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL) 1000 f = 1MHz 800 600 CISS 400 200 COSS CRSS COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER ...

Page 4

... HGTP10N40F1D, HGTP10N50F1D Typical Performance Curves 1000 +150 +100 75W 200V 100 CE f MAX1 f MAX2 V = 400V COLLECTOR-EMITTER CURRENT (A) CE NOTE ALLOWABLE DISSIPATION P = CONDUCTION DISSIPATION D C FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL) ...

Page 5

... HGTP10N40F1D, HGTP10N50F1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

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