IRGPS4067DPBF International Rectifier, IRGPS4067DPBF Datasheet

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IRGPS4067DPBF

Manufacturer Part Number
IRGPS4067DPBF
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
International Rectifier
Datasheet
www.DataSheet.co.kr
Features
Benefits
1
V
I
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
NOMINAL
CM
LM
F
F
FM
J
STG
CES
GE
D
D
JC
JC
CS
JA
@ T
@ T
Low V
Low Switching Losses
5μs SCSOA
Square RBSOA
100% of The Parts Tested for I
Positive V
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
@ T
@ T
to Low V
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE (on)
CE (ON)
CE (on)
Trench IGBT Technology
and Low Switching Losses
Temperature Coefficient.
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
LM

GE
Parameter
Parameter
= 15V
d
GE
= 20V
c
f
f
G
n-channel
C
E
Gate
G
Min.
IRGPS4067DPbF
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
C
-55 to +175
Collector
Super-247
t
SC
Max.
Typ.
160
0.24
240
600
120
360
480
240
160
480
±20
±30
750
375
–––
–––
–––
C
V
5μs, T
CE(on)
I
C(Nominal)
G
V
C
CES
E
Max.
typ. = 1.70V
0.20
0.63
–––
J(max)
40
= 600V
Emitter
= 120A
www.irf.com
E
PD - 97736
= 175°C
Units
Units
10/18/11
°C/W
°C
W
V
A
V
Datasheet pdf - http://www.DataSheet4U.net/

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IRGPS4067DPBF Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink (flat, greased surface) CS R Thermal Resistance, Junction-to-Ambient (typical socket mount)   LM n-channel Parameter = 15V 20V GE d Parameter f f IRGPS4067DPbF 600V CES I = 120A C(Nominal) 5μ J(max) V typ. = 1.70V E CE(on ...

Page 2

... IRGPS4067DPbF Electrical Characteristics @ T J Parameter V Collector-to-Emitter Brea Volta g e (BR)CES V /T T emperature Coeff reakdow n Voltage (B R)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) V /T J Threshold Voltage temp. coefficient GE (th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... Current = I RMS 100 125 150 175 10μsec 100μsec 1msec DC 100 1000 10000 =15V GE IRGPS4067DPbF For both: Duty cycle : 50 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 375W 10 of fundamental) 800 700 600 500 400 300 200 ...

Page 4

... IRGPS4067DPbF 350 300 250 200 150 100 (V) Fig Typ. IGBT Output Characteristics T = -40° 80μs J 350 300 250 200 150 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 80μs ...

Page 5

... 4.7 15V 100 Rg ( 120A 15V T = 175° 66μ IRGPS4067DPbF 350 300 -40° 25°C 250 175°C 200 150 100 GE, Gate-to-Emitter Voltage (V) Fig Typ. Transfer Characteristics V = 50V ...

Page 6

... IRGPS4067DPbF 4.7 10 20 50 100 Fig Typ. Diode 175° 350 400 450 di F /dt (A/μs) Fig Typ. Diode 400V 15V 800 700 600 500 4.7  ...

Page 7

...  J  J  1  1 Ci= iRi Ci iRi 1E-005 0.0001 0.001 Rectangular Pulse Duration (sec) IRGPS4067DPbF 16 V CES = 300V 14 V CES = 400V 100 150 200 Total Gate Charge (nC) Fig Typical Gate Charge vs 120A ...

Page 8

... IRGPS4067DPbF 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C. SOA Circuit R = DUT Rg Fig.C.T.5 - Resistive Load Circuit 8 L DUT VCC 4X DC VCC DUT SCSOA VCC ICM VCC G force DUT Rg Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L -5V DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit ...

Page 9

... -30 -100 Q RR 10% Peak IRR 200 400 IRGPS4067DPbF 700 tr 600 CUR R ENT 500 400 90% tes t 300 current 200 1 0% tes t current 100 0 Eon Loss -400 -300 -200 -100 0 100 200 300 400 time (ns) Fig. WF2 - Typ. Turn-on Loss Waveform @ T = 175° ...

Page 10

... IRGPS4067DPbF Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH Note: "P" in assembly line position IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 10 ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE " ...

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